No. |
Part Name |
Description |
Manufacturer |
91 |
1N4004 |
Diode 400V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
92 |
1N4004 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
93 |
1N4004 |
Diffused silicon rectifier 1A 400V |
Texas Instruments |
94 |
1N4004G |
Diode 400V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
95 |
1N4004GP |
400 V, 1A glass passivated junction rectifier |
Fagor |
96 |
1N4004GP |
Diode 400V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
97 |
1N4005 |
V(rrm): 600V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
98 |
1N4005 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 600V |
IPRS Baneasa |
99 |
1N4005 |
Rectifier Diode 600V 1A |
Motorola |
100 |
1N4005 |
Diode 600V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
101 |
1N4005 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
102 |
1N4005 |
Diffused silicon rectifier 1A 600V |
Texas Instruments |
103 |
1N4005A |
Diode Switching 600V 1A 2-Pin DO-41 Ammo |
New Jersey Semiconductor |
104 |
1N4005B |
Diode 600V 1A 2-Pin DO-41 Box |
New Jersey Semiconductor |
105 |
1N4005G |
Diode 600V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
106 |
1N4005GP |
600 V, 1A glass passivated junction rectifier |
Fagor |
107 |
1N4005GP |
Diode 600V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
108 |
1N4006 |
V(rrm): 800V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
109 |
1N4006 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 800V |
IPRS Baneasa |
110 |
1N4006 |
Rectifier Diode 800V 1A |
Motorola |
111 |
1N4006 |
Diode 800V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
112 |
1N4006 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
113 |
1N4006 |
Diffused silicon rectifier 1A 800V |
Texas Instruments |
114 |
1N4006G |
Diode 800V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
115 |
1N4006GP |
800 V, 1A glass passivated junction rectifier |
Fagor |
116 |
1N4006T |
Diode 800V 1A 2-Pin DO-41 T/R |
New Jersey Semiconductor |
117 |
1N4007 |
V(rrm): 1000V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
118 |
1N4007 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 1000V |
IPRS Baneasa |
119 |
1N4007 |
Rectifier Diode 1000V 1A |
Motorola |
120 |
1N4007 |
Diode 1KV 1A 2-Pin DO-41 |
New Jersey Semiconductor |
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