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Datasheets for 28

Datasheets found :: 4661
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No. Part Name Description Manufacturer
31 1214-55 55 W, 28 V, 1200-1400 MHz common base transistor GHz Technology
32 1417-12A 12 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
33 1417-6A 6 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
34 1516-35 35 W, 28 V, 1450-1550 MHz common base transistor GHz Technology
35 15KP160 Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A. Panjit International Inc
36 15KP160C Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A. Panjit International Inc
37 15KP28 Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case 5A New Jersey Semiconductor
38 15KP280 Diode TVS Single Uni-Dir 280V 15KW 2-Pin Case 5A New Jersey Semiconductor
39 15KP280A Diode TVS Single Uni-Dir 280V 15KW 2-Pin Case 5A New Jersey Semiconductor
40 15KP280C Diode TVS Single Bi-Dir 280V 15KW 2-Pin Case 5A New Jersey Semiconductor
41 15KP280CA Diode TVS Single Bi-Dir 280V 15KW 2-Pin Case 5A New Jersey Semiconductor
42 15KP28A Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case 5A New Jersey Semiconductor
43 15KP28C Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case 5A New Jersey Semiconductor
44 15KP28CA Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case 5A New Jersey Semiconductor
45 15KPA28 Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case P600 T/R New Jersey Semiconductor
46 15KPA28A Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case P600 Tape and Ammo New Jersey Semiconductor
47 15KPA28C Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case P600 T/R New Jersey Semiconductor
48 15KPA28CA Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case P600 Tape and Ammo New Jersey Semiconductor
49 1617-35 35 Watts, 28 Volts, Pulsed Radar 1540 - 1660 MHz GHz Technology
50 1618-35 35 W, 28 V, 1600-1800 MHz common base transistor GHz Technology
51 1719-20 20 W, 28 V, 1700-1900 MHz common base transistor GHz Technology
52 1719-35 35 W, 28 V, 1725-1850 MHz common base transistor GHz Technology
53 1719-8 8 W, 28 V, 1700-1900 MHz common base transistor GHz Technology
54 1819-35 35 W, 28 V, 1750-1850 MHz common base transistor GHz Technology
55 1N1319 150mW Zener diode 28.5V Motorola
56 1N1319A 150mW Zener diode 28.5V Motorola
57 1N4119 Diode Zener Single 28V 5% 250mW 2-Pin DO-35 New Jersey Semiconductor
58 1N4119 Silicon Zener Diode 250 Milliwatt Low Noise 28V Transitron Electronic
59 1N4119C 500mW low noise silicon zener diode. Nominal zener voltage 28V. 2% tolerance. Jinan Gude Electronic Device
60 1N4119D 500mW low noise silicon zener diode. Nominal zener voltage 28V. 1% tolerance. Jinan Gude Electronic Device


Datasheets found :: 4661
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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