No. |
Part Name |
Description |
Manufacturer |
31 |
1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor |
GHz Technology |
32 |
1417-12A |
12 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
33 |
1417-6A |
6 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
34 |
1516-35 |
35 W, 28 V, 1450-1550 MHz common base transistor |
GHz Technology |
35 |
15KP160 |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A. |
Panjit International Inc |
36 |
15KP160C |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A. |
Panjit International Inc |
37 |
15KP28 |
Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
38 |
15KP280 |
Diode TVS Single Uni-Dir 280V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
39 |
15KP280A |
Diode TVS Single Uni-Dir 280V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
40 |
15KP280C |
Diode TVS Single Bi-Dir 280V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
41 |
15KP280CA |
Diode TVS Single Bi-Dir 280V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
42 |
15KP28A |
Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
43 |
15KP28C |
Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
44 |
15KP28CA |
Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
45 |
15KPA28 |
Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
46 |
15KPA28A |
Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
47 |
15KPA28C |
Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
48 |
15KPA28CA |
Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
49 |
1617-35 |
35 Watts, 28 Volts, Pulsed Radar 1540 - 1660 MHz |
GHz Technology |
50 |
1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor |
GHz Technology |
51 |
1719-20 |
20 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
52 |
1719-35 |
35 W, 28 V, 1725-1850 MHz common base transistor |
GHz Technology |
53 |
1719-8 |
8 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
54 |
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor |
GHz Technology |
55 |
1N1319 |
150mW Zener diode 28.5V |
Motorola |
56 |
1N1319A |
150mW Zener diode 28.5V |
Motorola |
57 |
1N4119 |
Diode Zener Single 28V 5% 250mW 2-Pin DO-35 |
New Jersey Semiconductor |
58 |
1N4119 |
Silicon Zener Diode 250 Milliwatt Low Noise 28V |
Transitron Electronic |
59 |
1N4119C |
500mW low noise silicon zener diode. Nominal zener voltage 28V. 2% tolerance. |
Jinan Gude Electronic Device |
60 |
1N4119D |
500mW low noise silicon zener diode. Nominal zener voltage 28V. 1% tolerance. |
Jinan Gude Electronic Device |
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