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Datasheets for 28

Datasheets found :: 4900
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No. Part Name Description Manufacturer
31 1214-30 30 W, 28 V, 1200-1400 MHz common base transistor GHz Technology
32 1214-55 55 W, 28 V, 1200-1400 MHz common base transistor GHz Technology
33 1417-12A 12 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
34 1417-6A 6 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
35 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics
36 1516-35 35 W, 28 V, 1450-1550 MHz common base transistor GHz Technology
37 15KP160 Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A. Panjit International Inc
38 15KP160C Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A. Panjit International Inc
39 15KP28 Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case 5A New Jersey Semiconductor
40 15KP280 Diode TVS Single Uni-Dir 280V 15KW 2-Pin Case 5A New Jersey Semiconductor
41 15KP280A Diode TVS Single Uni-Dir 280V 15KW 2-Pin Case 5A New Jersey Semiconductor
42 15KP280C Diode TVS Single Bi-Dir 280V 15KW 2-Pin Case 5A New Jersey Semiconductor
43 15KP280CA Diode TVS Single Bi-Dir 280V 15KW 2-Pin Case 5A New Jersey Semiconductor
44 15KP28A Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case 5A New Jersey Semiconductor
45 15KP28C Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case 5A New Jersey Semiconductor
46 15KP28CA Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case 5A New Jersey Semiconductor
47 15KPA28 Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case P600 T/R New Jersey Semiconductor
48 15KPA28A Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case P600 Tape and Ammo New Jersey Semiconductor
49 15KPA28C Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case P600 T/R New Jersey Semiconductor
50 15KPA28CA Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case P600 Tape and Ammo New Jersey Semiconductor
51 1617-35 35 Watts, 28 Volts, Pulsed Radar 1540 - 1660 MHz GHz Technology
52 1618-35 35 W, 28 V, 1600-1800 MHz common base transistor GHz Technology
53 1719-20 20 W, 28 V, 1700-1900 MHz common base transistor GHz Technology
54 1719-35 35 W, 28 V, 1725-1850 MHz common base transistor GHz Technology
55 1719-8 8 W, 28 V, 1700-1900 MHz common base transistor GHz Technology
56 1819-35 35 W, 28 V, 1750-1850 MHz common base transistor GHz Technology
57 1893 1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications SGS Thomson Microelectronics
58 1N1319 150mW Zener diode 28.5V Motorola
59 1N1319A 150mW Zener diode 28.5V Motorola
60 1N4119 Diode Zener Single 28V 5% 250mW 2-Pin DO-35 New Jersey Semiconductor


Datasheets found :: 4900
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