No. |
Part Name |
Description |
Manufacturer |
91 |
1N5255D |
Diode Zener Single 28V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
92 |
1N5255UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 28 V. |
Microsemi |
93 |
1N5362 |
Zener Diode 28V 5W |
Motorola |
94 |
1N5362 |
Diode Zener Single 28V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
95 |
1N5362A |
Zener Diode 28V 5W |
Motorola |
96 |
1N5362A |
Diode Zener Single 28V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
97 |
1N5362B |
Zener Diode 28V 5W |
Motorola |
98 |
1N5362B |
Diode Zener Single 28V 5% 5W 2-Pin DO-201AE |
New Jersey Semiconductor |
99 |
1N5362B |
Zener 28V 5W 5% |
ON Semiconductor |
100 |
1N5362BRL |
Zener 28V 5W 5% |
ON Semiconductor |
101 |
1N5362C |
Diode Zener Single 28V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
102 |
1N5362D |
Diode Zener Single 28V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
103 |
1N5395G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
Jinan Gude Electronic Device |
104 |
1N5544 |
Diode Zener Single 28V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
105 |
1N5544A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
106 |
1N5544A |
Diode Zener Single 28V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
107 |
1N5544B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
108 |
1N5544B |
Diode Zener Single 28V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
109 |
1N5544C |
Diode Zener Single 28V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
110 |
1N5544D |
Diode Zener Single 28V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
111 |
1N5645A |
Diode TVS Single Uni-Dir 28.2V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
112 |
1N5928 |
1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
113 |
1N5928A |
1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
114 |
1N5928C |
1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
115 |
1N5928D |
1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
116 |
1N6051A |
Diode TVS Single Bi-Dir 28V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
117 |
1N6283A |
Diode TVS Single Uni-Dir 28.2V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
118 |
1N6283ARL4 |
Diode TVS Single Uni-Dir 28.2V 1.5KW 2-Pin Case 41A-04 T/R |
New Jersey Semiconductor |
119 |
1N746 |
500 mW silicon linear diode. Max zener impedance 28.0 Ohm, max zener voltage 3.3 V (Iz 20mA). |
Fairchild Semiconductor |
120 |
2001 |
1 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
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