No. |
Part Name |
Description |
Manufacturer |
31 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
32 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
33 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
34 |
1N5909 |
Miniature Light Emitting Diode visible RED PN Gallium Arsenide Phosphide |
Motorola |
35 |
1N6264 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
36 |
1N6264 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
37 |
1N6265 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
38 |
1N6265 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
39 |
1N6266 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
40 |
1N6266 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
41 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
42 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
43 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
44 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
45 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
46 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
47 |
2N3553 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
48 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
49 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
50 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
51 |
2N5071 |
24W(CW), 76-MHz Emiter-Balasted Overlay RF Power Transistor |
RCA Solid State |
52 |
2N5911 |
Panel Mount Light Emitting Diode visible green PN gallium phosphide |
Motorola |
53 |
2N5912 |
Panel mount light emitting diode visible yellow PN gallium phosphide |
Motorola |
54 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
55 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
56 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
57 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
58 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
59 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
60 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
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