No. |
Part Name |
Description |
Manufacturer |
91 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
92 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
93 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
94 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
95 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
96 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
97 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
98 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
99 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
100 |
2SH13 |
Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications |
TOSHIBA |
101 |
2SH14 |
Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications |
TOSHIBA |
102 |
2SH20 |
Silicon P emitter planar transistor (industrial applications) |
TOSHIBA |
103 |
2SH20 |
Silicon P emitter planar unijunction transistor |
TOSHIBA |
104 |
2SH21 |
Silicon P emitter planar transistor (industrial applications) |
TOSHIBA |
105 |
2SH21 |
Silicon P emitter planar unijunction transistor |
TOSHIBA |
106 |
3110-12SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
107 |
3110-14SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
108 |
3110-16SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
109 |
3110-6SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
110 |
3110-8SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
111 |
3N108 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
112 |
3N109 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
113 |
3N110 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
114 |
3N111 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
115 |
3N112 |
TWIN PNP DUET DUAL EMITTER CHOPPER - silicon transistors |
Sprague |
116 |
3N113 |
TWIN PNP DUET DUAL EMITTER CHOPPER - silicon transistors |
Sprague |
117 |
3N114 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
118 |
3N115 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
119 |
3N116 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
120 |
3N117 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
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