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Datasheets for EMI

Datasheets found :: 5571
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 2SC2001 Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 USHA India LTD
92 2SC2337 Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
93 2SC2337A Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
94 2SC838 Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. USHA India LTD
95 2SC9011 Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = USHA India LTD
96 2SC945 Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. USHA India LTD
97 2SD1616A Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. USHA India LTD
98 2SD227 Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. USHA India LTD
99 2SD5041 Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. USHA India LTD
100 2SH13 Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications TOSHIBA
101 2SH14 Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications TOSHIBA
102 2SH20 Silicon P emitter planar transistor (industrial applications) TOSHIBA
103 2SH20 Silicon P emitter planar unijunction transistor TOSHIBA
104 2SH21 Silicon P emitter planar transistor (industrial applications) TOSHIBA
105 2SH21 Silicon P emitter planar unijunction transistor TOSHIBA
106 3110-12SA 3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI Hirose Electric
107 3110-14SA 3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI Hirose Electric
108 3110-16SA 3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI Hirose Electric
109 3110-6SA 3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI Hirose Electric
110 3110-8SA 3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI Hirose Electric
111 3N108 DUET PNP dual emitter silicon transistors choppers Sprague
112 3N109 DUET PNP dual emitter silicon transistors choppers Sprague
113 3N110 DUET PNP dual emitter silicon transistors choppers Sprague
114 3N111 DUET PNP dual emitter silicon transistors choppers Sprague
115 3N112 TWIN PNP DUET DUAL EMITTER CHOPPER - silicon transistors Sprague
116 3N113 TWIN PNP DUET DUAL EMITTER CHOPPER - silicon transistors Sprague
117 3N114 DUET PNP dual emitter silicon transistors choppers Sprague
118 3N115 DUET PNP dual emitter silicon transistors choppers Sprague
119 3N116 DUET PNP dual emitter silicon transistors choppers Sprague
120 3N117 DUET PNP dual emitter silicon transistors choppers Sprague


Datasheets found :: 5571
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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