No. |
Part Name |
Description |
Manufacturer |
31 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
32 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
33 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
34 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
35 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
36 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
37 |
2N3553 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
38 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
39 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
40 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
41 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
42 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
43 |
2SA1078 |
SILICON PNP RING EMITTER TRANSISTOR (RET) |
Fujitsu Microelectronics |
44 |
2SA1080 |
SILICON PNP RING EMITTER TRANSISTOR(RET) |
Fujitsu Microelectronics |
45 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
46 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
47 |
2SH13 |
Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications |
TOSHIBA |
48 |
2SH14 |
Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications |
TOSHIBA |
49 |
2SH20 |
Silicon P emitter planar unijunction transistor |
TOSHIBA |
50 |
2SH21 |
Silicon P emitter planar unijunction transistor |
TOSHIBA |
51 |
3N108 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
52 |
3N109 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
53 |
3N110 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
54 |
3N111 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
55 |
3N112 |
TWIN PNP DUET DUAL EMITTER CHOPPER - silicon transistors |
Sprague |
56 |
3N113 |
TWIN PNP DUET DUAL EMITTER CHOPPER - silicon transistors |
Sprague |
57 |
3N114 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
58 |
3N115 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
59 |
3N116 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
60 |
3N117 |
DUET PNP dual emitter silicon transistors choppers |
Sprague |
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