| No. |
Part Name |
Description |
Manufacturer |
| 91 |
AT-36408 |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 92 |
AT-36408-BLK |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 93 |
AT-36408-TR1 |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 94 |
AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor |
Agilent (Hewlett-Packard) |
| 95 |
AT-38086-BLK |
4.8 V NPN Silicon Bipolar Common Emitter Transistor |
Agilent (Hewlett-Packard) |
| 96 |
AT-38086-TR1 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor |
Agilent (Hewlett-Packard) |
| 97 |
BF550 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
| 98 |
BF599 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion) |
Siemens |
| 99 |
BF840 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 100 |
BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 101 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
| 102 |
BZW20 |
Transistor with integrated base emitter resistance and a Zener diode, marking TZ |
Siemens |
| 103 |
CA3081 |
General-Purpose High-Current NPN transistor Arrays (common emitter array) |
RCA Solid State |
| 104 |
CA3081F |
General-Purpose High-Current NPN transistor Arrays (common emitter array) |
RCA Solid State |
| 105 |
EB29 |
Application Note - The common emitter TO-39 and its advantages |
Motorola |
| 106 |
EMA6DXV5T1 |
Dual Common Emitter Bipolar Resistor Transistor |
ON Semiconductor |
| 107 |
EMG_SERIES |
Dual Common Emitter BRTs |
ON Semiconductor |
| 108 |
FM150 |
150 W, 28 V, 88-108 MHz common emitter transistor |
GHz Technology |
| 109 |
FMA9 |
Digital transistor (Common Emitter Dual Transistors) |
ROHM |
| 110 |
FZL131 |
Driver with open emitter output and 4 inputs for 20V |
Siemens |
| 111 |
FZL131S |
Driver with open emitter output and 4 inputs for 30V |
Siemens |
| 112 |
FZL135 |
Driver with open emitter output and 4 inputs for 20V |
Siemens |
| 113 |
FZL135S |
Driver with open emitter output and 4 inputs for 30V |
Siemens |
| 114 |
H23B1 |
MATCHED EMITTER DETECTOR PAIR |
General Electric Solid State |
| 115 |
HSDL-4400 |
High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package |
Agilent (Hewlett-Packard) |
| 116 |
HSDL-4420 |
High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package |
Agilent (Hewlett-Packard) |
| 117 |
HSDL-5400 |
High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package |
Agilent (Hewlett-Packard) |
| 118 |
HSDL-5420 |
High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package |
Agilent (Hewlett-Packard) |
| 119 |
IRAMX20UP60A |
20A, 600V with open Emitter Pins |
International Rectifier |
| 120 |
IS654A |
5V; 60mA 3mm DIA matched infrared emitter detector pair phototransistor output |
ISOCOM |
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