| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N938 |
Temperature-compensated silicon zener reference diode. 500mA, 9.0V. |
Motorola |
| 32 |
1N938A |
Temperature-compensated silicon zener reference diode. 500mA, 9.0V. |
Motorola |
| 33 |
1N938B |
Temperature-compensated silicon zener reference diode. 500mA, 9.0V. |
Motorola |
| 34 |
1N939 |
Temperature-compensated silicon zener reference diode. 500mA, 9.0V. |
Motorola |
| 35 |
1N939A |
Temperature-compensated silicon zener reference diode. 500mA, 9.0V. |
Motorola |
| 36 |
1N939B |
Temperature-compensated silicon zener reference diode. 500mA, 9.0V. |
Motorola |
| 37 |
1N941 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.088V |
Motorola |
| 38 |
1N941A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.181V |
Motorola |
| 39 |
1N941B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.239V |
Motorola |
| 40 |
1N942 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.044V |
Motorola |
| 41 |
1N942A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.090V |
Motorola |
| 42 |
1N942B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.120V |
Motorola |
| 43 |
1N943 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
| 44 |
1N943A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.036V |
Motorola |
| 45 |
1N943B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.047V |
Motorola |
| 46 |
1N944 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
| 47 |
1N944A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
| 48 |
1N944B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.024V |
Motorola |
| 49 |
1N945 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.004V |
Motorola |
| 50 |
1N945A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
| 51 |
1N945B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.012V |
Motorola |
| 52 |
288 |
Subminiature halogen lamp. 5.0V, 6.0V; 0.90A, 1,00A; 54 lumens, 100 lumens. |
Gilway Technical Lamp |
| 53 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 54 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 55 |
2N3416 |
Silicon transistor. 50V, 500mA. |
General Electric Solid State |
| 56 |
2N3417 |
Silicon transistor. 50V, 500mA. |
General Electric Solid State |
| 57 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 58 |
2N4409 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.250A Ic, 60 - 400 hFE |
Continental Device India Limited |
| 59 |
2N5086 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE |
Continental Device India Limited |
| 60 |
2N5087 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - hFE |
Continental Device India Limited |
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