No. |
Part Name |
Description |
Manufacturer |
61 |
2N5232 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
62 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
63 |
2N5232A |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
64 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
65 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
66 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
67 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
68 |
2N6109 |
40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
69 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
70 |
2N6290 |
40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 |
Continental Device India Limited |
71 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
72 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
73 |
2N718A |
0.500W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
74 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
75 |
3149 |
T-1 3/4 subminiature, bi-pin lamp. 5.0 volts, 0.06 amps. |
Gilway Technical Lamp |
76 |
3150 |
T-1 3/4 subminiature, miniature flanged lamp. 5.0 volts, 0.06 amps. |
Gilway Technical Lamp |
77 |
3152 |
T-1 3/4 subminiature, miniature grooved lamp. 5.0 volts, 0.06 amps. |
Gilway Technical Lamp |
78 |
3153 |
T-1 3/4 subminiature, midget screw lamp. 5.0 volts, 0.06 amps. |
Gilway Technical Lamp |
79 |
3518 |
T-1 3/4 subminiature, miniature flanged lamp. 5.0 volts, 0.115 amps. |
Gilway Technical Lamp |
80 |
3582 |
T-1 3/4 subminiature, miniature flanged lamp. 5.0 volts, 0.060 amps. |
Gilway Technical Lamp |
81 |
3585 |
T-1 3/4 subminiature, miniature flanged lamp. 5.0 volts, 0.060 amps. |
Gilway Technical Lamp |
82 |
40407 |
Silicon N-P-N power transistor. 50V. |
General Electric Solid State |
83 |
5962F0151601QXA |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
84 |
5962F0151601QXC |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
85 |
5962F0151601QXX |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
86 |
5962F0151601QYA |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
87 |
5962F0151601QYC |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
88 |
5962F0151601QYX |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
89 |
5962F0151601VXA |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
90 |
5962F0151601VXC |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
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