| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N4772 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
| 32 |
1N4772A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
| 33 |
1N4773 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
| 34 |
1N4773A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
| 35 |
1N4774 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
| 36 |
1N4774A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
| 37 |
1N5231 |
500 mW silicon zener diode. Nominal zener voltage 5.1 V. |
Fairchild Semiconductor |
| 38 |
1N5231 |
500mW, 5.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 39 |
1N5231A |
5.1 V, 500 mW silicon zener diode |
BKC International Electronics |
| 40 |
1N5231A |
5.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 41 |
1N5231AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.1 V. Tolerance +-10%. |
Microsemi |
| 42 |
1N5231B |
5.1 V, 500 mW silicon zener diode |
BKC International Electronics |
| 43 |
1N5231BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.1 V. Tolerance +-5%. |
Microsemi |
| 44 |
1N5231C |
5.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 45 |
1N5231D |
5.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 46 |
1N5231UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.1 V. |
Microsemi |
| 47 |
1N5239 |
500 mW silicon zener diode. Nominal zener voltage 9.1 V. |
Fairchild Semiconductor |
| 48 |
1N5239 |
500mW, 9.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 49 |
1N5239A |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 50 |
1N5239AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. Tolerance +-10%. |
Microsemi |
| 51 |
1N5239BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. Tolerance +-5%. |
Microsemi |
| 52 |
1N5239C |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 53 |
1N5239D |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 54 |
1N5239UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. |
Microsemi |
| 55 |
1N5346B |
9.1 V, 150 mA, 5 W glass passivated zener diode |
Fagor |
| 56 |
1N5523A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 57 |
1N5523B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 58 |
1N5523C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 59 |
1N5529A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 60 |
1N5529B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
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