| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5529C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 62 |
1N6270 |
9.1 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 63 |
1N6270A |
9.1 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 64 |
1N6270C |
9.1 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 65 |
1N6270CA |
9.1 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 66 |
1N751 |
5.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 67 |
1N751 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 68 |
1N751 |
400mW, 5.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 69 |
1N751A |
5.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 70 |
1N751A |
500mW, silicon zener diode. Zener voltage 5.1 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 71 |
1N751A-1 |
5.1 V, 400 mW silicon zener diode |
BKC International Electronics |
| 72 |
1N751B |
5.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 73 |
1N751C |
500mW, silicon zener diode. Zener voltage 5.1 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 74 |
1N751C |
5.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 75 |
1N751D |
500mW, silicon zener diode. Zener voltage 5.1 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 76 |
1N751D |
5.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 77 |
1N757 |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 78 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 79 |
1N757 |
400mW, 9.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 80 |
1N757A |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 81 |
1N757A |
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 82 |
1N757A-1 |
9.1 V, 400 mW silicon zener diode |
BKC International Electronics |
| 83 |
1N757B |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 84 |
1N757C |
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 85 |
1N757C |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 86 |
1N757D |
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 87 |
1N757D |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 88 |
1N960 |
500 mW silicon planar zener diode. Max zener voltage 9.1 V. |
Fairchild Semiconductor |
| 89 |
1N960 |
400mW, 9.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 90 |
1N960A |
9.1 V, 14 mA, silicon planar zener diode |
Honey Technology |
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