| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N5227D |
3.6 V, 20 mA, zener diode |
Leshan Radio Company |
| 32 |
1N5227UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. |
Microsemi |
| 33 |
1N5232 |
500 mW silicon zener diode. Nominal zener voltage 5.6 V. |
Fairchild Semiconductor |
| 34 |
1N5232 |
500mW, 5.6 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 35 |
1N5232AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. Tolerance +-10%. |
Microsemi |
| 36 |
1N5232BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. Tolerance +-5%. |
Microsemi |
| 37 |
1N5232C |
5.6 V, 20 mA, zener diode |
Leshan Radio Company |
| 38 |
1N5232D |
5.6 V, 20 mA, zener diode |
Leshan Radio Company |
| 39 |
1N5232UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. |
Microsemi |
| 40 |
1N5249A |
19 V, 6.6 mA, zener diode |
Leshan Radio Company |
| 41 |
1N5249C |
19 V, 6.6 mA, zener diode |
Leshan Radio Company |
| 42 |
1N5249D |
19 V, 6.6 mA, zener diode |
Leshan Radio Company |
| 43 |
1N5251A |
22 V, 5.6 mA, zener diode |
Leshan Radio Company |
| 44 |
1N5251C |
22 V, 5.6 mA, zener diode |
Leshan Radio Company |
| 45 |
1N5251D |
22 V, 5.6 mA, zener diode |
Leshan Radio Company |
| 46 |
1N5254A |
27 V, 4.6 mA, zener diode |
Leshan Radio Company |
| 47 |
1N5254C |
27 V, 4.6 mA, zener diode |
Leshan Radio Company |
| 48 |
1N5254D |
27 V, 4.6 mA, zener diode |
Leshan Radio Company |
| 49 |
1N5519A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 50 |
1N5519B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 51 |
1N5524A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 52 |
1N5524B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 53 |
1N5524C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 54 |
1N5524D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 55 |
1N5913 |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 56 |
1N5913A |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 57 |
1N5913C |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 58 |
1N5913D |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 59 |
1N5934 |
1.5 W, silicon zener diode. Zener voltage 24V. Test current 15.6 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 60 |
1N5934A |
1.5 W, silicon zener diode. Zener voltage 24V. Test current 15.6 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
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