No. |
Part Name |
Description |
Manufacturer |
91 |
1N752D |
5.6 V, 20 mA, zener diode |
Leshan Radio Company |
92 |
1N969A |
22 V, 5.6 mA, silicon planar zener diode |
Honey Technology |
93 |
1N969B |
22 V, 5.6 mA, silicon planar zener diode |
Honey Technology |
94 |
1N971A |
27 V, 4.6 mA, silicon planar zener diode |
Honey Technology |
95 |
1N971B |
27 V, 4.6 mA, silicon planar zener diode |
Honey Technology |
96 |
1SMB5914A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 3.6 V. +-10% tolerance. |
Motorola |
97 |
1SMB5914B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 3.6 V. +-5% tolerance. |
Motorola |
98 |
1SMB5919A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 5.6 V. +-10% tolerance. |
Motorola |
99 |
1SMB5919B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 5.6 V. +-5% tolerance. |
Motorola |
100 |
2-2WI-600S-16 |
1600 V, 730 A, 5.6 kA water cooled A.C.switch |
POSEICO SPA |
101 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
102 |
2N2907A |
60 V, 0.6 A, PNP silicon planar transistor |
Siemens |
103 |
2N2907AHR |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
104 |
2N2907AHRG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
105 |
2N2907AHRT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
106 |
2N2907ARHRG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
107 |
2N2907ARHRT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
108 |
2N2907ARUBG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
109 |
2N2907ARUBT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
110 |
2N2907AUB1 |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
111 |
2N2907AUBG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
112 |
2N2907AUBT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
113 |
2N7002K |
Small Signal MOSFET 60V 380mA 1.6 Ohm Single N-Channel SOT-23 |
ON Semiconductor |
114 |
2N7002W |
Small Signal MOSFET 60V 340mA 1.6 Ohm Single N-Channel SC-70 |
ON Semiconductor |
115 |
2SC5094 |
Dual Inverter (open drain) with 3.6 V Tolerant Input and Output |
TOSHIBA |
116 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
117 |
2SK3666 |
N-Channel JFET, 30V, 0.6 to 6.0mA, 6.5mS, CP |
ON Semiconductor |
118 |
2SK3796 |
N-Channel JFET, 30V, 0.6 to 6.0mA, 6.5mS, SMCP |
ON Semiconductor |
119 |
5082-7401-00000 |
7.6 mm (0.3 inch) Micro Bright Seven Segment Displays |
Agilent (Hewlett-Packard) |
120 |
5082-7401-00300 |
7.6 mm (0.3 inch) Micro Bright Seven Segment Displays |
Agilent (Hewlett-Packard) |
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