| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N416D |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 32 |
1N416E |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 33 |
1N416F |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 34 |
1N416G |
Microwave S-band Mixer; NF=10.3 to 5.5 dB |
Motorola |
| 35 |
1N4187B |
110.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 36 |
1N4740 |
10.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 37 |
1N4740 |
1 W silicon zener diode. Nominal zener voltage 10.0 V. |
Fairchild Semiconductor |
| 38 |
1N4740A |
10.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 39 |
1N4939 |
Germanium Microwave Ka-band Mixer, NF=10.5dB |
Motorola |
| 40 |
1N5141 |
Diode VAR Cap Single 60V 10.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 41 |
1N5240 |
500 mW silicon zener diode. Nominal zener voltage 10.0 V. |
Fairchild Semiconductor |
| 42 |
1N5240B |
10.0V 500 mW Zener Diode |
Continental Device India Limited |
| 43 |
1N5530A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 44 |
1N5530B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 45 |
1N5635A |
Diode TVS Single Uni-Dir 10.2V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 46 |
1N5636 |
Diode TVS Single Uni-Dir 10.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 47 |
1N5736B |
10.0V Voltage Reference Diode |
Philips |
| 48 |
1N5938 |
1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 49 |
1N5938A |
1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 50 |
1N5938C |
1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 51 |
1N5938D |
1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 52 |
1N6273A |
Diode TVS Single Uni-Dir 10.22V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 53 |
1N6274 |
Diode TVS Single Uni-Dir 10.5V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 54 |
1N6375 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 55 |
1N6383 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 56 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 57 |
1N758 |
10.0V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 58 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 59 |
1N758 |
400mW, 10.0 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 60 |
1N758A |
10.0V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
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