| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N758A |
Voltage Regulator Diode 10.0V |
Philips |
| 62 |
1N758D |
500mW, silicon zener diode. Zener voltage 10.0 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 63 |
1N961 |
10.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 64 |
1N961 |
500 mW silicon planar zener diode. Max zener voltage 10.0 V. |
Fairchild Semiconductor |
| 65 |
1N961A |
10.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 66 |
1N961B |
10.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 67 |
1N962B |
10.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 68 |
1N963 |
0.5W, silicon zener diode. Zener voltage 12V. Test current 10.5mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 69 |
1N963A |
12 V, 10.5 mA, silicon planar zener diode |
Honey Technology |
| 70 |
1N963A |
0.5W, silicon zener diode. Zener voltage 12V. Test current 10.5mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 71 |
1N963B |
12 V, 10.5 mA, silicon planar zener diode |
Honey Technology |
| 72 |
1N963D |
0.5W, silicon zener diode. Zener voltage 12V. Test current 10.5mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 73 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 74 |
2322 640 10. . . |
NTC Thermistors, Special Accuracy |
Vishay |
| 75 |
274.100 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/10. Nominal resistance cold 1.25 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 76 |
274.200 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 2/10. Nominal resistance cold 2.30 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 77 |
274.300 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 3/10. Nominal resistance cold 1.25 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 78 |
274.400 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 4/10. Nominal resistance cold 0.227 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 79 |
274.600 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 6/10. Nominal resistance cold 0.430 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 80 |
274.700 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 7/10. Nominal resistance cold 0.324 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 81 |
274.800 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 8/10. Nominal resistance cold 0.271 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 82 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
| 83 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 84 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 85 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 86 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 87 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 88 |
2N6101 |
75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 89 |
2SC380 |
Silicon NPN planar transistor, FM IF (10.7MHz) amplifier applications |
TOSHIBA |
| 90 |
2SC380A |
Silicon NPN planar transistor, FM IF (10.7MHz) amplifier applications |
TOSHIBA |
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