No. |
Part Name |
Description |
Manufacturer |
31 |
1K2S-N012 |
Input voltage 200-260 VAC;output voltage 12 VDC;output current:100 A; 1.2 KW enclosed parallel power supply |
FranMar International |
32 |
1K5S-N012 |
Input voltage 200-260 VAC;output voltage 12 VDC;output current:125 A; 1.5 KW enclosed parallel power supply |
FranMar International |
33 |
1N103 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
34 |
1N104 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
35 |
1N3889 |
50 V, 12 A fast recovery rectifier |
Solid State Devices Inc |
36 |
1N3890 |
100 V, 12 A fast recovery rectifier |
Solid State Devices Inc |
37 |
1N3891 |
200 V, 12 A fast recovery rectifier |
Solid State Devices Inc |
38 |
1N3892 |
300 V, 12 A fast recovery rectifier |
Solid State Devices Inc |
39 |
1N3893 |
400 V, 12 A fast recovery rectifier |
Solid State Devices Inc |
40 |
1N4112 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
41 |
1N4112 (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
42 |
1N4712 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
43 |
1N4742 |
12 V, 1 W silicon zener diode |
BKC International Electronics |
44 |
1N4742 |
1 WATT, 12 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
45 |
1N4742A |
12 V, 1 W silicon zener diode |
BKC International Electronics |
46 |
1N4742A |
Voltage regulator diode. Working voltage (nom) 12 V . |
Philips |
47 |
1N4742A |
12 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
48 |
1N5242 |
500mW, 12 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
49 |
1N5242A |
12 V, 20 mA, zener diode |
Leshan Radio Company |
50 |
1N5242AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 12 V. Tolerance +-10%. |
Microsemi |
51 |
1N5242BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 12 V. Tolerance +-5%. |
Microsemi |
52 |
1N5242C |
12 V, 20 mA, zener diode |
Leshan Radio Company |
53 |
1N5242D |
12 V, 20 mA, zener diode |
Leshan Radio Company |
54 |
1N5242UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 12 V. |
Microsemi |
55 |
1N5349B |
12 V, 100 mA, 5 W glass passivated zener diode |
Fagor |
56 |
1N5349B |
12 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
57 |
1N5378B |
100 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
58 |
1N5379B |
110 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
59 |
1N571 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
60 |
1N5927B |
12 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
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