| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 32 |
1504-225D |
Delay 225 +/-12 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 33 |
1504-240C |
Delay 240 +/-12 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 34 |
1504-240E |
Delay 240 +/-12 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 35 |
1504-240F |
Delay 240 +/-12 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 36 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 37 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 38 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 39 |
1K2S-N012 |
Input voltage 200-260 VAC;output voltage 12 VDC;output current:100 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 40 |
1K5S-N012 |
Input voltage 200-260 VAC;output voltage 12 VDC;output current:125 A; 1.5 KW enclosed parallel power supply |
FranMar International |
| 41 |
1N103 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 42 |
1N104 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 43 |
1N3889 |
50 V, 12 A fast recovery rectifier |
Solid State Devices Inc |
| 44 |
1N3890 |
100 V, 12 A fast recovery rectifier |
Solid State Devices Inc |
| 45 |
1N3891 |
200 V, 12 A fast recovery rectifier |
Solid State Devices Inc |
| 46 |
1N3892 |
300 V, 12 A fast recovery rectifier |
Solid State Devices Inc |
| 47 |
1N3893 |
400 V, 12 A fast recovery rectifier |
Solid State Devices Inc |
| 48 |
1N4112 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 49 |
1N4112 (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
| 50 |
1N4712 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 51 |
1N4742 |
12 V, 1 W silicon zener diode |
BKC International Electronics |
| 52 |
1N4742 |
1 WATT, 12 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 53 |
1N4742A |
12 V, 1 W silicon zener diode |
BKC International Electronics |
| 54 |
1N4742A |
Voltage regulator diode. Working voltage (nom) 12 V . |
Philips |
| 55 |
1N4742A |
12 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 56 |
1N5242 |
500mW, 12 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 57 |
1N5242A |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 58 |
1N5242AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 12 V. Tolerance +-10%. |
Microsemi |
| 59 |
1N5242BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 12 V. Tolerance +-5%. |
Microsemi |
| 60 |
1N5242C |
12 V, 20 mA, zener diode |
Leshan Radio Company |
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