| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5242D |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 62 |
1N5242UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 12 V. |
Microsemi |
| 63 |
1N5349B |
12 V, 100 mA, 5 W glass passivated zener diode |
Fagor |
| 64 |
1N5349B |
12 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 65 |
1N5378B |
100 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
| 66 |
1N5379B |
110 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
| 67 |
1N571 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 68 |
1N5927B |
12 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 69 |
1N5V1 |
Inverters 5 Volt, 12 Volt |
Gilway Technical Lamp |
| 70 |
1N6273 |
12 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 71 |
1N6273A |
12 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 72 |
1N6273C |
12 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 73 |
1N6273CA |
12 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 74 |
1N759 |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
| 75 |
1N759A |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
| 76 |
1N759A |
500mW, silicon zener diode. Zener voltage 12 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 77 |
1N759A-1 |
12 V, 400 mW silicon zener diode |
BKC International Electronics |
| 78 |
1N759B |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 79 |
1N759C |
500mW, silicon zener diode. Zener voltage 12 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 80 |
1N759C |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 81 |
1N759D |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 82 |
1N78 |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 83 |
1N78A |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 84 |
1N78B |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 85 |
1N78C |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 86 |
1N78D |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 87 |
1N78E |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 88 |
1N78F |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 89 |
1N963 |
400mW, 12 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 90 |
1N963A |
12 V, 10.5 mA, silicon planar zener diode |
Honey Technology |
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