No. |
Part Name |
Description |
Manufacturer |
31 |
1N5255B |
Diode Zener Single 28V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
32 |
1N5255C |
Diode Zener Single 28V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
33 |
1N5255D |
Diode Zener Single 28V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
34 |
1N5362 |
Zener Diode 28V 5W |
Motorola |
35 |
1N5362 |
Diode Zener Single 28V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
36 |
1N5362A |
Zener Diode 28V 5W |
Motorola |
37 |
1N5362A |
Diode Zener Single 28V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
38 |
1N5362B |
Zener Diode 28V 5W |
Motorola |
39 |
1N5362B |
Diode Zener Single 28V 5% 5W 2-Pin DO-201AE |
New Jersey Semiconductor |
40 |
1N5362B |
Zener 28V 5W 5% |
ON Semiconductor |
41 |
1N5362BRL |
Zener 28V 5W 5% |
ON Semiconductor |
42 |
1N5362C |
Diode Zener Single 28V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
43 |
1N5362D |
Diode Zener Single 28V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
44 |
1N5544 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 28V ±20% tolerance |
Motorola |
45 |
1N5544 |
Diode Zener Single 28V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
46 |
1N5544A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 28V ±10% tolerance |
Motorola |
47 |
1N5544A |
Diode Zener Single 28V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
48 |
1N5544B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 28V ±5% tolerance |
Motorola |
49 |
1N5544B |
Diode Zener Single 28V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
50 |
1N5544C |
Diode Zener Single 28V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
51 |
1N5544D |
Diode Zener Single 28V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
52 |
1N5661A |
Diode TVS Single Uni-Dir 128V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
53 |
1N6051A |
Diode TVS Single Bi-Dir 28V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
54 |
1N6067A |
Diode TVS Single Bi-Dir 128V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
55 |
1N6299A |
Diode TVS Single Uni-Dir 128V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
56 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
57 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
58 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
59 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
60 |
2N5643 |
NPN RF transistor 28V Class C 40W |
SGS Thomson Microelectronics |
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