| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SC1763 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 40W power, 28V supply voltage |
TOSHIBA |
| 62 |
2SC1764 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 80W power, 28V supply voltage |
TOSHIBA |
| 63 |
2SC2510 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) |
TOSHIBA |
| 64 |
2SC2531 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications 28V supply voltage use |
TOSHIBA |
| 65 |
2SC3537 |
Class C, 900MHz 28V power transistor (This datasheet of NEM092081B-28 is also the datasheet of 2SC3537, see the Electrical Characteristics table) |
NEC |
| 66 |
2SC3538 |
Class C, 900MHz 28V power transistor (This datasheet of NEM094081B-28 is also the datasheet of 2SC3538, see the Electrical Characteristics table) |
NEC |
| 67 |
2SC3539 |
Class C, 900MHz 28V power transistor (This datasheet of NEM096081B-28 is also the datasheet of 2SC3539, see the Electrical Characteristics table) |
NEC |
| 68 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
| 69 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
| 70 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 71 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 72 |
30KP28 |
Diode TVS Single Uni-Dir 28V 30KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 73 |
30KP28A |
Diode TVS Single Uni-Dir 28V 30KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 74 |
30KP28C |
Diode TVS Single Bi-Dir 28V 30KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 75 |
30KP28CA |
Diode TVS Single Bi-Dir 28V 30KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 76 |
30KPA28 |
Diode TVS Single Uni-Dir 28V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 77 |
30KPA28A |
Diode TVS Single Uni-Dir 28V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 78 |
30KPA28C |
Diode TVS Single Bi-Dir 28V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 79 |
30KPA28CA |
Diode TVS Single Bi-Dir 28V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 80 |
42050-288 |
28V DC; 10A; positive voltage regulator. For use in general purpose applications |
Micropac Industries |
| 81 |
5KP28 |
Diode TVS Single Uni-Dir 28V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 82 |
5KP28A |
Diode TVS Single Uni-Dir 28V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 83 |
5KP28C |
Diode TVS Single Bi-Dir 28V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 84 |
5KP28CA |
Diode TVS Single Bi-Dir 28V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 85 |
829A |
SILICON 28V HYPERABRUPT VARACTOR DIODES |
Zetex Semiconductors |
| 86 |
829B |
SILICON 28V HYPERABRUPT VARACTOR DIODES |
Zetex Semiconductors |
| 87 |
830 |
SILICON 28V HYPERABRUPT VARACTOR DIODES |
Zetex Semiconductors |
| 88 |
83000 |
3.0GHz 0.5W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 89 |
83001 |
3.0GHz 1.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 90 |
830A |
SILICON 28V HYPERABRUPT VARACTOR DIODES |
Zetex Semiconductors |
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