| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2SC3838 |
High-Frequency Amplifier Transistor(11V/ 50mA/ 3.2GHz) |
ROHM |
| 32 |
40909 |
2W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 33 |
A80960HD50SL2GH |
80960HA/HD/HT 32-Bit High-Performance Superscalar Processor |
Intel |
| 34 |
ABA3101 |
1.2GHz Balanced Low Noise Linear Amplifier |
Skyworks Solutions |
| 35 |
ABA3101RS33P1 |
1.2GHz Balanced Low Noise Linear Amplifier |
Skyworks Solutions |
| 36 |
AD8344 |
400MHz to 1.2GHz Active Receive Mixer |
Analog Devices |
| 37 |
AD8344-EVAL |
400MHz to 1.2GHz Active Receive Mixer |
Analog Devices |
| 38 |
AD8344ACPZ-REEL7 |
400MHz to 1.2GHz Active Receive Mixer |
Analog Devices |
| 39 |
AD8344ACPZ-WP |
400MHz to 1.2GHz Active Receive Mixer |
Analog Devices |
| 40 |
AM2023-001 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 41 |
AM2023-003 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 42 |
AM2023-006 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 43 |
AM2327-001 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 44 |
AM2327-003 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 45 |
AM2327-005 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 46 |
AM4962GH-G1 |
SINGLE PHASE FULL WAVE DIRECT PWM MOTOR DRIVER |
Diodes |
| 47 |
AM4962GHTR-G1 |
SINGLE PHASE FULL WAVE DIRECT PWM MOTOR DRIVER |
Diodes |
| 48 |
APPLICATION-NOTE |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 |
NEC |
| 49 |
AT84CS001TP-EB |
10-BIT 1:2/4 2.2GHz LVDS DMUX |
Atmel |
| 50 |
AT84CS001VTP |
10-BIT 1:2/4 2.2GHz LVDS DMUX |
Atmel |
| 51 |
AT84XCS001TP |
10-BIT 1:2/4 2.2GHz LVDS DMUX |
Atmel |
| 52 |
BAT14-03 |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) |
Siemens |
| 53 |
BAT14-03W |
Schottky Diodes - RF Schottky diode for DBS mixer application to 12GHz |
Infineon |
| 54 |
BAT14-03W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) |
Siemens |
| 55 |
BAT15-03W |
Schottky Diodes - RF Schottky diode for DBS mixer application to 12GHz |
Infineon |
| 56 |
BAT15-099 |
Schottky Diodes - Silicon dual RF Schottky diode for DBS mixer application to 12GHz |
Infineon |
| 57 |
BB831 |
Varactordiodes - Silicon variable capacitance diode with frequency range up to 2GHz |
Infineon |
| 58 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
| 59 |
BFG193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 60 |
BFG23 |
Silicon-epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
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