No. |
Part Name |
Description |
Manufacturer |
31 |
AT84CS001TP-EB |
10-BIT 1:2/4 2.2GHz LVDS DMUX |
Atmel |
32 |
AT84CS001VTP |
10-BIT 1:2/4 2.2GHz LVDS DMUX |
Atmel |
33 |
AT84XCS001TP |
10-BIT 1:2/4 2.2GHz LVDS DMUX |
Atmel |
34 |
BAT14-03 |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) |
Siemens |
35 |
BAT14-03W |
Schottky Diodes - RF Schottky diode for DBS mixer application to 12GHz |
Infineon |
36 |
BAT14-03W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) |
Siemens |
37 |
BAT15-03W |
Schottky Diodes - RF Schottky diode for DBS mixer application to 12GHz |
Infineon |
38 |
BAT15-099 |
Schottky Diodes - Silicon dual RF Schottky diode for DBS mixer application to 12GHz |
Infineon |
39 |
BB831 |
Varactordiodes - Silicon variable capacitance diode with frequency range up to 2GHz |
Infineon |
40 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
41 |
BFG193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
42 |
BFG23 |
Silicon-epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
43 |
BFG32 |
Silicon planar epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
44 |
BFG51 |
Silicon-epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
45 |
BFG65 |
NPN 2GHz wideband transistor |
Philips |
46 |
BFG90A |
Silicon planar epitaxial NPN transistor, designed for wideband application in CATV and MATV systems up to 2GHz |
Philips |
47 |
BFG96 |
Silicon planar epitaxial NPN transistor wideband application up to 2GHz |
Philips |
48 |
BFP193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
49 |
BFP193W |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
50 |
BFP81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
Siemens |
51 |
BFP93 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
52 |
BFP93A |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
53 |
BFQ193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
54 |
BFQ66 |
NPN 2GHz broadband silicon transistor |
Philips |
55 |
BFQ73 |
NPN SILICON RF TRANSISTOR (FOR LOW-NOISE/ LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) |
Siemens |
56 |
BFQ73S |
NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) |
Siemens |
57 |
BFQ81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications) |
Siemens |
58 |
BFQ88 |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
59 |
BFQ88A |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
60 |
BFR14B |
NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz |
Siemens |
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