| No. |
Part Name |
Description |
Manufacturer |
| 91 |
ECA2GHG3R3 |
Aluminum Electrolytic Capacitors (Radial Lead Type) NHG-A |
Panasonic |
| 92 |
ECA2GHG3R3B |
Aluminum Electrolytic Capacitors (Radial Lead Type) NHG-A |
Panasonic |
| 93 |
ECA2GHG3R3E |
Aluminum Electrolytic Capacitors (Radial Lead Type) NHG-A |
Panasonic |
| 94 |
ECA2GHG470 |
Aluminum Electrolytic Capacitors (Radial Lead Type) NHG-A |
Panasonic |
| 95 |
ECA2GHG470E |
Aluminum Electrolytic Capacitors (Radial Lead Type) NHG-A |
Panasonic |
| 96 |
ECA2GHG4R7 |
Aluminum Electrolytic Capacitors (Radial Lead Type) NHG-A |
Panasonic |
| 97 |
ECA2GHG4R7B |
Aluminum Electrolytic Capacitors (Radial Lead Type) NHG-A |
Panasonic |
| 98 |
ECA2GHG4R7E |
Aluminum Electrolytic Capacitors (Radial Lead Type) NHG-A |
Panasonic |
| 99 |
EL2075 |
2GHz GBWP Gain-of-10 Stable Operational Amplifier |
Elantec Semiconductor |
| 100 |
EL2075 |
2GHz GBWP Gain-of-10 Stable Operational Amplifier |
Intersil |
| 101 |
EL2075C |
2GHz GBWP Gain-of-10 Stable Operational Amplifier |
Elantec Semiconductor |
| 102 |
EL2075CN |
2GHz GBWP Gain-of-10 Stable Operational Amplifier |
Elantec Semiconductor |
| 103 |
EL2075CS |
2GHz GBWP Gain-of-10 Stable Operational Amplifier |
Elantec Semiconductor |
| 104 |
ENA1090 |
RF Transistor, 10V, 100mA, fT=5.2GHz, NPN Single SMCP |
ON Semiconductor |
| 105 |
G8195-11 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 106 |
G8195-12 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 107 |
G8195-21 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 108 |
G8195-22 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 109 |
G8195-31 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 110 |
G8195-32 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 111 |
HM6C5332 |
HM6C5332 - 1.2GHz/250MHz Dual Frequency Synthesizer |
Hynix Semiconductor |
| 112 |
HMMC-3022 |
HMMC-3022 · Chip 0.5-12GHz high efficiency GaAs HBT prescalers |
Agilent (Hewlett-Packard) |
| 113 |
HMMC-3024 |
HMMC-3024 · Chip 0.5-12GHz high efficiency GaAs HBT prescalers |
Agilent (Hewlett-Packard) |
| 114 |
HMMC-3028 |
HMMC-3028 · Chip 0.5-12GHz high efficiency GaAs HBT prescalers |
Agilent (Hewlett-Packard) |
| 115 |
HMMC-3122 |
HMMC-3122 · SO-8 SMT 0.5-12GHz high eff. GaAs HBT prescalers |
Agilent (Hewlett-Packard) |
| 116 |
HMMC-3124 |
HMMC-3124 · SO-8 SMT 0.5-12GHz high eff. GaAs HBT prescalers |
Agilent (Hewlett-Packard) |
| 117 |
HMMC-3128 |
HMMC-3128 · SO-8 SMT 0.5-12GHz high eff. GaAs HBT prescalers |
Agilent (Hewlett-Packard) |
| 118 |
HMMC-5021DC |
2-22GHz GaAs MMIC traveling wave amplifier |
Agilent (Hewlett-Packard) |
| 119 |
HMMC-5021RF |
2-22GHz GaAs MMIC traveling wave amplifier |
Agilent (Hewlett-Packard) |
| 120 |
HMMC-5022DC |
2-22GHz GaAs MMIC traveling wave amplifier |
Agilent (Hewlett-Packard) |
| | | |
