No. |
Part Name |
Description |
Manufacturer |
31 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
32 |
2N5551 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
33 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
34 |
2N5551 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
35 |
2N5551 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
36 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
37 |
2N5551 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
38 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
39 |
2N5551 |
Amplifier Transistors |
Motorola |
40 |
2N5551 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
41 |
2N5551 |
NPN General Purpose Amplifier |
National Semiconductor |
42 |
2N5551 |
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
43 |
2N5551 |
Small Signal Amplifier NPN |
ON Semiconductor |
44 |
2N5551 |
NPN high-voltage transistors |
Philips |
45 |
2N5551 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
46 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
47 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
48 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
49 |
2N5551-T |
Transistor |
Rectron Semiconductor |
50 |
2N5551BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
51 |
2N5551C |
High Voltage Transistor |
Korea Electronics (KEC) |
52 |
2N5551CBU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
53 |
2N5551CTA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
54 |
2N5551HR |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
55 |
2N5551HRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
56 |
2N5551HRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
57 |
2N5551RHRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
58 |
2N5551RHRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
59 |
2N5551RL1 |
Small Signal Amplifier NPN |
ON Semiconductor |
60 |
2N5551RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
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