No. |
Part Name |
Description |
Manufacturer |
91 |
2N5556 |
N-Channel JFET - low frequency, low noise |
National Semiconductor |
92 |
2N5556 |
N-Channel FETs - General Purpose AMPS |
National Semiconductor |
93 |
2N5556 |
FET |
New Jersey Semiconductor |
94 |
2N5557 |
Silicon N-CHANNEL Junction Field-Effect Transistor Type A |
Motorola |
95 |
2N5557 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
96 |
2N5557 |
N-Channel JFET - low frequency, low noise |
National Semiconductor |
97 |
2N5557 |
N-Channel FETs - General Purpose AMPS |
National Semiconductor |
98 |
2N5557 |
FET |
New Jersey Semiconductor |
99 |
2N5558 |
Silicon N-CHANNEL Junction Field-Effect Transistor Type A |
Motorola |
100 |
2N5558 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
101 |
2N5558 |
N-Channel JFET - low frequency, low noise |
National Semiconductor |
102 |
2N5558 |
N-Channel FETs - General Purpose AMPS |
National Semiconductor |
103 |
2N5559 |
Silicon NPN Transistor |
Motorola |
104 |
2N5559 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
105 |
H2N5551 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
106 |
HN_2N5550 |
140 V, NPN silicon expitaxial planar transistor |
Honey Technology |
107 |
HN_2N5551 |
160 V, NPN silicon expitaxial planar transistor |
Honey Technology |
108 |
J2N5551UB1 |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
109 |
JANS2N5551UBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
110 |
JANS2N5551UBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
111 |
JANSR2N5551UBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
112 |
JANSR2N5551UBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
113 |
PJ2N5551CT |
180V; 600mA NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
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