No. |
Part Name |
Description |
Manufacturer |
31 |
1N4752A |
33 V, 1 W silicon zener diode |
BKC International Electronics |
32 |
1N4752A |
33 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
33 |
1N4755A |
43 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
34 |
1N4769 |
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V. |
Motorola |
35 |
1N4774 |
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V. |
Motorola |
36 |
1N4777 |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
37 |
1N4778A |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
38 |
1N4779 |
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V. |
Motorola |
39 |
1N4782 |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
40 |
1N4783A |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
41 |
1N4784 |
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V. |
Motorola |
42 |
1N5226 |
500 mW silicon zener diode. Nominal zener voltage 3.3 V. |
Fairchild Semiconductor |
43 |
1N5226 |
500mW, 3.3 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
44 |
1N5226A |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
45 |
1N5226AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. Tolerance +-10%. |
Microsemi |
46 |
1N5226BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. Tolerance +-5%. |
Microsemi |
47 |
1N5226C |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
48 |
1N5226D |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
49 |
1N5226UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. |
Microsemi |
50 |
1N5229 |
500 mW silicon zener diode. Nominal zener voltage 4.3 V. |
Fairchild Semiconductor |
51 |
1N5229 |
500mW, 4.3 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
52 |
1N5229A |
4.3 V, 20 mA, zener diode |
Leshan Radio Company |
53 |
1N5229AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.3 V. Tolerance +-10%. |
Microsemi |
54 |
1N5229BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.3 V. Tolerance +-5%. |
Microsemi |
55 |
1N5229C |
4.3 V, 20 mA, zener diode |
Leshan Radio Company |
56 |
1N5229D |
4.3 V, 20 mA, zener diode |
Leshan Radio Company |
57 |
1N5229UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.3 V. |
Microsemi |
58 |
1N5234C |
6.3 V, 0.5W Zener Diode |
Fairchild Semiconductor |
59 |
1N5243 |
500mW, 13 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
60 |
1N5243A |
13 V, 9.5 mA, zener diode |
Leshan Radio Company |
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