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Datasheets for 3 V

Datasheets found :: 7878
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 1N5243AUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 13 V. Tolerance +-10%. Microsemi
62 1N5243BUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 13 V. Tolerance +-5%. Microsemi
63 1N5243C 13 V, 9.5 mA, zener diode Leshan Radio Company
64 1N5243D 13 V, 9.5 mA, zener diode Leshan Radio Company
65 1N5243UR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 13 V. Microsemi
66 1N5257 500mW, 33 Volts Silicon Glass Zener Diode ITT Semiconductors
67 1N5257A 33 V, 3.8 mA, zener diode Leshan Radio Company
68 1N5257AUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 33 V. Tolerance +-10%. Microsemi
69 1N5257BUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 33 V. Tolerance +-5%. Microsemi
70 1N5257C 33 V, 3.8 mA, zener diode Leshan Radio Company
71 1N5257UR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 33 V. Microsemi
72 1N5260A 43 V, 3.0 mA, zener diode Leshan Radio Company
73 1N5260AUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 43 V. Tolerance +-10%. Microsemi
74 1N5260BUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 43 V. Tolerance +-5%. Microsemi
75 1N5260C 43 V, 3.0 mA, zener diode Leshan Radio Company
76 1N5260D 43 V, 3.0 mA, zener diode Leshan Radio Company
77 1N5260UR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 43 V. Microsemi
78 1N5350B 13 V, 100 mA, 5 W glass passivated zener diode Fagor
79 1N5350B 13 V, 5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
80 1N5364B 33 V, 40 mA, 5 W glass passivated zener diode Fagor
81 1N5364B 33 V, 5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
82 1N5367B 43 V, 30 mA, 5 W glass passivated zener diode Fagor
83 1N5367B 43 V, 5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
84 1N5518A 0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. Jinan Gude Electronic Device
85 1N5518B 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. Jinan Gude Electronic Device
86 1N5518D 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance. Jinan Gude Electronic Device
87 1N5521A 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-10% tolerance. Jinan Gude Electronic Device
88 1N5521B 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-5% tolerance. Jinan Gude Electronic Device
89 1N5521D 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-1% tolerance. Jinan Gude Electronic Device
90 1N5928B 13 V, 1.5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited


Datasheets found :: 7878
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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