No. |
Part Name |
Description |
Manufacturer |
31 |
1N4751 |
30 V, 1 W silicon zener diode |
BKC International Electronics |
32 |
1N4751 |
1 WATT, 30 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
33 |
1N4751A |
30 V, 1 W silicon zener diode |
BKC International Electronics |
34 |
1N4751A |
30 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
35 |
1N497 |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
36 |
1N5256 |
500mW, 30 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
37 |
1N5256A |
30 V, 4.2 mA, zener diode |
Leshan Radio Company |
38 |
1N5256AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 30 V. Tolerance +-10%. |
Microsemi |
39 |
1N5256BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 30 V. Tolerance +-5%. |
Microsemi |
40 |
1N5256C |
30 V, 4.2 mA, zener diode |
Leshan Radio Company |
41 |
1N5256D |
30 V, 4.2 mA, zener diode |
Leshan Radio Company |
42 |
1N5256UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 30 V. |
Microsemi |
43 |
1N5274AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 130 V. Tolerance +-10%. |
Microsemi |
44 |
1N5274BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 130 V. Tolerance +-5%. |
Microsemi |
45 |
1N5274UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 130 V. |
Microsemi |
46 |
1N5363B |
30 V, 40 mA, 5 W glass passivated zener diode |
Fagor |
47 |
1N5363B |
30 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
48 |
1N5381B |
130 V, 10 mA, 5 W glass passivated zener diode |
Fagor |
49 |
1N5381B |
130 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
50 |
1N5818 |
30 V, 1 A schottky power rectifier diode |
BKC International Electronics |
51 |
1N5818 |
30 V, 1A schottky barrier rectifier |
Fagor |
52 |
1N5818 |
30 V, 1 A schottky barrier rectifier |
Invac |
53 |
1N5818 |
30 V, 1 A, schottky barrier rectifier |
TRANSYS Electronics Limited |
54 |
1N5818G |
30 V, 1.0 A schottky barrier rectifier diode |
EIC discrete Semiconductors |
55 |
1N5821 |
30 V, 3 A schottky barrier rectifier |
Fagor |
56 |
1N5821 |
30 V, 3 A schottky barrier rectifier |
Invac |
57 |
1N5821 |
30 V, 3 A, schottky barrier rectifier |
TRANSYS Electronics Limited |
58 |
1N5936B |
30 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
59 |
1N5952 |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
60 |
1N5952A |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
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