No. |
Part Name |
Description |
Manufacturer |
91 |
1V275 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
92 |
1Z330 |
Silicon diffused type zener diode. Typ zener voltage 330 V. |
Panasonic |
93 |
2EZ130 |
130 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
94 |
2EZ130 |
130 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
95 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
96 |
2N7104 |
30 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
97 |
2N7105 |
30 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
98 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
99 |
2SK4043LS |
Power MOSFET 30 V, 20 A, 21 mOhm Single N-Channel |
ON Semiconductor |
100 |
2V275 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
101 |
31002A |
Telephone tone ringer. Supply voltage 30 V. |
Contek Microelectronics |
102 |
32F0308DISCOVERY |
Discovery kit for STM32F030 Value line - with STM32F030R8 MCU |
ST Microelectronics |
103 |
3EZ130 |
130 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
104 |
3EZ130D |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
105 |
3EZ130D1 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
106 |
3EZ130D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 1% tolerance. |
Motorola |
107 |
3EZ130D10 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
108 |
3EZ130D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 10% tolerance. |
Motorola |
109 |
3EZ130D2 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
110 |
3EZ130D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 2% tolerance. |
Motorola |
111 |
3EZ130D3 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
112 |
3EZ130D4 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
113 |
3EZ130D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. |
Motorola |
114 |
3EZ330D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 330 V. 1% tolerance. |
Motorola |
115 |
3EZ330D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 330 V. 10% tolerance. |
Motorola |
116 |
3EZ330D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 330 V. 2% tolerance. |
Motorola |
117 |
3EZ330D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 330 V. |
Motorola |
118 |
524V27 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
119 |
600S-N003 |
Input voltage 90-130 VAC;output voltage 3.3 VDC;output current:100 A; 600 W enclosed parallel power supply |
FranMar International |
120 |
600S-N005 |
Input voltage 90-130 VAC;output voltage 5 VDC;output current:100 A; 600 W enclosed parallel power supply |
FranMar International |
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