| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N5542B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 24.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 32 |
1N5745B |
24.0V Voltage Reference Diode |
Philips |
| 33 |
1N747 |
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). |
Fairchild Semiconductor |
| 34 |
1N960 |
0.5W, silicon zener diode. Zener voltage 9.1V. Test current 14.0mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 35 |
1N960A |
0.5W, silicon zener diode. Zener voltage 9.1V. Test current 14.0mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 36 |
1N970 |
24.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 37 |
1N970 |
500 mW silicon planar zener diode. Max zener voltage 24.0 V. |
Fairchild Semiconductor |
| 38 |
1N970A |
24.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 39 |
1N970B |
24.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 40 |
20KW104 |
104.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 41 |
20KW104A |
104.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 42 |
20KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 43 |
20KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 44 |
20KW204 |
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 45 |
20KW204A |
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 46 |
274.002 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/500. Nominal resistance cold 2200 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 47 |
274.005 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/200. Nominal resistance cold 280.0 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 48 |
274.010 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/100. Nominal resistance cold 80.0 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 49 |
274.015 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/64. Nominal resistance cold 44.0 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 50 |
274.015 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/64. Nominal resistance cold 44.0 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 51 |
274.031 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/32. Nominal resistance cold 16.0 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 52 |
274.050 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/20. Nominal resistance cold 3.20 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 53 |
274.062 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/16. Nominal resistance cold 2.32 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 54 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 55 |
2N5192 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. |
Continental Device India Limited |
| 56 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 57 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 58 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 59 |
2N5945 |
NPN silicon RF power transistor 4.0W - 470MHz |
Motorola |
| 60 |
2N6036 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. |
Continental Device India Limited |
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