| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N6037 |
40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
| 62 |
2N6038 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
| 63 |
2N6080 |
NPN silicon RF power transistor 4.0W - 175MHz |
Motorola |
| 64 |
2N6121 |
40.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 10 hFE. |
Continental Device India Limited |
| 65 |
2N6122 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 66 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 67 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 68 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 69 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 70 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 71 |
2SB596 |
POWER TRANSISTORS(4.0A,80V,30W) |
MOSPEC Semiconductor |
| 72 |
2SB703 |
POWER TRANSISTORS(4.0A,40W) |
MOSPEC Semiconductor |
| 73 |
2SD703A |
POWER TRANSISTORS(4.0A,40W) |
MOSPEC Semiconductor |
| 74 |
2SD743 |
POWER TRANSISTORS(4.0A,40W) |
MOSPEC Semiconductor |
| 75 |
2SD743A |
POWER TRANSISTORS(4.0A,40W) |
MOSPEC Semiconductor |
| 76 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 77 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 78 |
30R400 |
Resettable PTC. Ihold = 4.00A, Itrip = 8.00A, Vmax =30Vdc. Reel quantity 1500. |
Littelfuse |
| 79 |
330 |
T-1 3/4 subminiature, miniature flanged lamp. 14.0 volts, 0.08 amps. |
Gilway Technical Lamp |
| 80 |
336 |
T-1 3/4 subminiature, miniature grooved lamp. 14.0 volts, 0.08 amps. |
Gilway Technical Lamp |
| 81 |
33981 |
High-Frequency, High-Current, Self-Protected High-Side Switch (4.0 m�� up to 60 kHz) |
Motorola |
| 82 |
33984 |
Dual Intelligent High-Current Self-Protected Silicon High-Side Switch (4.0 m��) |
Motorola |
| 83 |
3425L200DR |
Resettable PTC. Ihold = 2.00A, Itrip = 4.0, Vmax = 15Vdc. Reel quantity 1500. |
Littelfuse |
| 84 |
373 |
T-1 3/4 subminiature, midget screw lamp. 14.0 volts, 0.08 amps. |
Gilway Technical Lamp |
| 85 |
382 |
T-1 3/4 subminiature, miniature flanged lamp. 14.0 volts, 0.08 amps. |
Gilway Technical Lamp |
| 86 |
386 |
T-1 3/4 subminiature, miniature grooved lamp. 14.0 volts, 0.08 amps. |
Gilway Technical Lamp |
| 87 |
393 |
T-1 3/4 subminiature, miniature grooved lamp. 14.0 volts, 0.100 amps. |
Gilway Technical Lamp |
| 88 |
3EZ190D |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 89 |
3EZ190D1 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 90 |
3EZ190D10 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
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