No. |
Part Name |
Description |
Manufacturer |
31 |
DRA744BJGABCRQ1 |
SoC Processor for Automotive Infotainment 760-FCBGA |
Texas Instruments |
32 |
DRA754BJGABCQ1 |
Dual 1.0 GHz A15, Dual EVE, Dual DSP, Extended Peripherals SoC Processor for Infotainment 760-XCEPT -40 to 125 |
Texas Instruments |
33 |
DRA754BJGABCRQ1 |
Dual 1.0 GHz A15, Dual EVE, Dual DSP, Extended Peripherals SoC Processor for Infotainment 760-XCEPT -40 to 125 |
Texas Instruments |
34 |
ESDLIN1524BJ |
Transil™, transient voltage surge suppressor diode for ESD protection |
ST Microelectronics |
35 |
ICL7134BJCJI |
14-Bit Multiplying Microprocessor-Compatible D/A Converter |
Intersil |
36 |
ICL7134BJIJI |
14-Bit Multiplying Microprocessor-Compatible D/A Converter |
Intersil |
37 |
ICL7134BJMJI |
14-Bit Multiplying Microprocessor-Compatible D/A Converter |
Intersil |
38 |
IP1524BJ |
Advanced regulating pulse width modulator |
Seagate Microelectronics |
39 |
IP1524BJ |
Advanced Regulating Pulse Width Modulator |
SemeLAB |
40 |
IP1524BJ-883B |
Advanced Regulating Pulse Width Modulator |
SemeLAB |
41 |
IP1524BJ-BSS2 |
Advanced Regulating Pulse Width Modulator |
SemeLAB |
42 |
IP1524BJ-DESC |
Advanced Regulating Pulse Width Modulator |
SemeLAB |
43 |
IP2524BJ |
Regulating Pulse Width Modulator |
SemeLAB |
44 |
IP3524BJ |
Advanced regulating pulse width modulator |
Seagate Microelectronics |
45 |
IP3524BJ |
Regulating Pulse Width Modulator |
SemeLAB |
46 |
KM416C1004BJ-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
47 |
KM416C1004BJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
48 |
KM416C1004BJ-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
49 |
KM416C1004BJ-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
50 |
KM416C1004BJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
51 |
KM416C1004BJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
52 |
KM416C1004BJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
53 |
KM416C1004BJ-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
54 |
KM416C1204BJ-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
55 |
KM416C1204BJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
56 |
KM416C1204BJ-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
57 |
KM416C1204BJ-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
58 |
KM416C1204BJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
59 |
KM416C1204BJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
60 |
KM416C1204BJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
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