No. |
Part Name |
Description |
Manufacturer |
61 |
KM416C1204BJ-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
62 |
KM416V1004BJ-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
63 |
KM416V1004BJ-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
64 |
KM416V1004BJ-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
65 |
KM416V1004BJ-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
66 |
KM416V1004BJ-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
67 |
KM416V1004BJ-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
68 |
KM416V1204BJ |
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
69 |
KM416V1204BJ-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
70 |
KM416V1204BJ-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
71 |
KM416V1204BJ-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
72 |
KM416V1204BJ-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
73 |
KM416V1204BJ-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
74 |
KM416V1204BJ-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
75 |
KT8554BJ |
1 chip CODEC |
Samsung Electronic |
76 |
LC321664BJ |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write |
SANYO |
77 |
LC321664BJ-70 |
1 MEG (65536 words x 16 bit) DRAM, fast page mode, byte write |
SANYO |
78 |
LC321664BJ-80 |
1 MEG (65536 words x 16 bit) DRAM fast page mode, byte write |
SANYO |
79 |
LZ2354BJ |
1/3-type CCD Area Sensors with 410 k Pixels |
SHARP |
80 |
LZ2364BJ |
1/3-type CCD Area Sensors with 470 k Pixels |
SHARP |
81 |
MAX4074BJESA |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 49V/V, noninverting gain 50V/V, -3dB BW 50kHZ. |
MAXIM - Dallas Semiconductor |
82 |
MAX4074BJEUK-T |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 49V/V, noniverting gain 50V/V, -3dB BW 50kHZ. |
MAXIM - Dallas Semiconductor |
83 |
MAX4174BJEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 49, 1+ (Rf/Dg) noninverting gain 50, -3dB BW 310kHz. |
MAXIM - Dallas Semiconductor |
84 |
MAX4274BJESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 49, 1+ (Rf/Dg) noninverting gain 50, -3dB BW 310kHz. |
MAXIM - Dallas Semiconductor |
85 |
MAX4274BJEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 49, 1+ (Rf/Dg) noninverting gain 50, -3dB BW 310kHz. |
MAXIM - Dallas Semiconductor |
86 |
MSM6684BJS |
4,194,304-word x 1-bit serial register |
OKI electronic components |
87 |
RM24BJA-15P |
RM SERIES SHELL SIZE 12-31mm CIRCULAR CONNECTORS |
Hirose Electric |
88 |
RM24BJA-15S |
RM SERIES SHELL SIZE 12-31mm CIRCULAR CONNECTORS |
Hirose Electric |
89 |
SG1524BJ |
Voltage Mode PWMs |
Microsemi |
90 |
SG1524BJ-883B |
Flyback, Forward and Isolated |
Microsemi |
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