| No. |
Part Name |
Description |
Manufacturer |
| 31 |
GMG114N60SF |
1400 V single-phase rectifier bridge |
Green Power |
| 32 |
GMG114N60SS |
1400 V single-phase rectifier bridge |
Green Power |
| 33 |
HGTG24N60D1 |
24A/ 600V N-Channel IGBT |
Intersil |
| 34 |
HGTG24N60D1D |
24A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
Intersil |
| 35 |
IKP04N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... |
Infineon |
| 36 |
IXFE44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 37 |
IXFK44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 38 |
IXFK44N60 |
HiPerFET Power MOSFETs |
IXYS Corporation |
| 39 |
IXFN44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 40 |
IXFN44N60 |
HiPerFET Power MOSFETs Single Die MOSFET |
IXYS Corporation |
| 41 |
IXFR44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 42 |
IXFR44N60 |
HiPerFETTM Power MOSFETs ISOPLUS247 |
IXYS Corporation |
| 43 |
IXFX44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 44 |
IXFX44N60 |
HiPerFET Power MOSFETs |
IXYS Corporation |
| 45 |
IXGR24N60C |
HiPerFASTTM IGBT ISOPLUS247TM (Electrically Isolated Back Surface) |
IXYS Corporation |
| 46 |
IXSH24N60 |
IGBT Discretes: Low Saturation Voltage Types |
IXYS |
| 47 |
IXSH24N60AU1 |
HiPerFASTTM IGBT with Diode |
IXYS Corporation |
| 48 |
IXSH24N60U1 |
HiPerFASTTM IGBT with Diode |
IXYS Corporation |
| 49 |
KF4N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 50 |
KF4N60F |
N CHANNEL MOS FIELD EFFECT TRNASISTOR |
Korea Electronics (KEC) |
| 51 |
MCD04N60 |
Medium Power MOSFETS |
Micro Commercial Components |
| 52 |
MCP04N60 |
Medium Power MOSFETS |
Micro Commercial Components |
| 53 |
MCPF04N60 |
Medium Power MOSFETS |
Micro Commercial Components |
| 54 |
MCU04N60 |
Medium Power MOSFETS |
Micro Commercial Components |
| 55 |
MGP14N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 56 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 57 |
MGP4N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 58 |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 59 |
MGP4N60ED |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
ON Semiconductor |
| 60 |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| | | |
