| No. |
Part Name |
Description |
Manufacturer |
| 91 |
SPU04N60C3 |
Cool MOS Power Transistor |
Infineon |
| 92 |
SPU04N60S5 |
for lowest Conduction Losses |
Infineon |
| 93 |
SPW24N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 94 |
SSH4N60 |
N-Channel Power MOSFET |
Samsung Electronic |
| 95 |
SSI4N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 96 |
SSI4N60BTU |
600V N-Channel B-FET / Substitute of SSI4N60A |
Fairchild Semiconductor |
| 97 |
SSI4N60BTU |
600V N-Channel B-FET / Substitute of SSI4N60A |
Fairchild Semiconductor |
| 98 |
SSM4N60 |
N-Channel Power MOSFET |
Samsung Electronic |
| 99 |
SSP4N60 |
N-Channel Power MOSFET |
Samsung Electronic |
| 100 |
SSP4N60AS |
Advanced Power MOFET |
Fairchild Semiconductor |
| 101 |
SSP4N60AS |
Advanced Power MOFET |
Samsung Electronic |
| 102 |
SSP4N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 103 |
SSR4N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 104 |
SSR4N60BTF |
600V N-Channel B-FET / Substitute of SSR4N60A |
Fairchild Semiconductor |
| 105 |
SSR4N60BTF |
600V N-Channel B-FET / Substitute of SSR4N60A |
Fairchild Semiconductor |
| 106 |
SSR4N60BTM |
600V N-Channel B-FET / Substitute of SSR4N60A |
Fairchild Semiconductor |
| 107 |
SSR4N60BTM |
600V N-Channel B-FET / Substitute of SSR4N60A |
Fairchild Semiconductor |
| 108 |
SSS4N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 109 |
SSU4N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 110 |
SSU4N60BTU |
600V N-Channel B-FET / Substitute of SSU4N60A |
Fairchild Semiconductor |
| 111 |
SSU4N60BTU |
600V N-Channel B-FET / Substitute of SSU4N60A |
Fairchild Semiconductor |
| 112 |
SSW4N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 113 |
SSW4N60BTM |
600V N-Channel B-FET / Substitute of SSW4N60A |
Fairchild Semiconductor |
| 114 |
SSW4N60BTM |
600V N-Channel B-FET / Substitute of SSW4N60A |
Fairchild Semiconductor |
| 115 |
STB24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 116 |
STB24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 117 |
STF24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 118 |
STF24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 119 |
STFI24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 120 |
STFW24N60M2 |
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-3PF package |
ST Microelectronics |
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