No. |
Part Name |
Description |
Manufacturer |
31 |
B4600CR-5.9 |
5.9V 600mA low dropout voltage regulator |
BayLinear |
32 |
B8220K6-5.9 |
5.9V 1Amp surface mount zero bias schottky detector diode |
BayLinear |
33 |
B8220K6-5.9 |
5.9V 1Amp surface mount zero bias schottky detector diode |
BayLinear |
34 |
B8390K6-5.9 |
5.9V surface mount RF PIN switch diode |
BayLinear |
35 |
B8390K6-5.9 |
5.9V surface mount RF PIN switch diode |
BayLinear |
36 |
B850XK6-5.9 |
5.9V surface mount zero bias schottky detector diode |
BayLinear |
37 |
B850XK6-5.9 |
5.9V surface mount zero bias schottky detector diode |
BayLinear |
38 |
BD5259FVE |
Voltage detector, 5.9V |
ROHM |
39 |
BD5259G |
Voltage detector, 5.9V |
ROHM |
40 |
BD5359FVE |
Voltage detector, 5.9V |
ROHM |
41 |
BD5359G |
Voltage detector, 5.9V |
ROHM |
42 |
BUZ63 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.9A |
Siliconix |
43 |
DV20211 |
CHARACTER LCD MODULE display format: 20x2; module size: 182.5x60.0x20.0; viewing size: 147.0x35.2; dot size: 0.65x0.65; character size: 5.9x12.7; |
Data International CO.LTD. |
44 |
E2502H59 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1530.37 nm. Frequency 195.9 THz. |
Agere Systems |
45 |
ENA2152 |
N-Channel Power MOSFET, 12V, 18A, 5.9mOhm, Dual EFCP |
ON Semiconductor |
46 |
EXO-3-15.9744M |
Crystal oscillator for uPs with programmable output, 15.9744MHz |
Wolfgang Knap |
47 |
EXO-3-15.9744M |
Crystal oscillator for uPs with programmable output, 15.9744MHz |
Wolfgang Knap |
48 |
FDH055N15A |
N-Channel PowerTrench� MOSFET 150V, 167A, 5.9m? |
Fairchild Semiconductor |
49 |
HMC256 |
GaAs MMIC I/Q MIXER 5.9 - 12 GHz |
Hittite Microwave Corporation |
50 |
HMC408LP3 |
GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz |
Hittite Microwave Corporation |
51 |
HMC415LP3 |
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz |
Hittite Microwave Corporation |
52 |
HMC436MS8G |
GaAs MMIC DPDT DIVERSITY SWITCH, 4.9 - 5.9 GHz |
Hittite Microwave Corporation |
53 |
IPB06N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, D2PAK, RDSon = 5.9mOhm, 50A, LL |
Infineon |
54 |
IPD06N03L |
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 5.9mOhm, 50A, LL |
Infineon |
55 |
IPU06N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO251, RDSon = 5.9mOhm, 50A, LL |
Infineon |
56 |
IRFI630 |
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A) |
International Rectifier |
57 |
LC0402FC05C |
5.9V; 200W; low capacitance flip chip array. For notebook computers, cellular phones, personal digital assistant (PDA), SMART cards |
Protek Devices |
58 |
LC0404FC05C |
5.9V; 200W; low capacitance flip chip array. For notebook computers, cellular phones, personal digital assistant (PDA), SMART cards |
Protek Devices |
59 |
LC0406FC05C |
5.9V; 200W; low capacitance flip chip array. For notebook computers, cellular phones, personal digital assistant (PDA), SMART cards |
Protek Devices |
60 |
LC0408FC05C |
5.9V; 200W; low capacitance flip chip array. For notebook computers, cellular phones, personal digital assistant (PDA), SMART cards |
Protek Devices |
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