| No. |
Part Name |
Description |
Manufacturer |
| 61 |
LVA459A |
Diode Zener Single 5.9V 3.39% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 62 |
MGFC26V5964A |
5.9-6.4 GHz BAND 4W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 63 |
MGFC36V5964A |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 64 |
MGFC36V59964A |
5.9-6.4GHz band 4W internally matched GaAs FET |
Mitsubishi Electric Corporation |
| 65 |
MGFC38V5964 |
5.9-6.4 BAND 6W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 66 |
MGFC39V5964 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 67 |
MGFC39V5964A |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 68 |
MGFC40V5964A |
5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 69 |
MGFC41V5964 |
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 70 |
MGFC41V5964A |
5.9-6.4GHz band 12W internally matched GaAs FET |
Mitsubishi Electric Corporation |
| 71 |
MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 72 |
MGFC42V5964A |
5.9-6.4GHz band 16W internally matched GaAs FET |
Mitsubishi Electric Corporation |
| 73 |
MGFC44V5964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 74 |
MGFC45V5964A |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 75 |
MGFC45V5964A |
5.9-6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET |
Mitsubishi Electric Corporation |
| 76 |
MHW930 |
30 W 925.960 MHz RF POWER AMPLIFIER |
Motorola |
| 77 |
MNA-2 |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
| 78 |
MNA-3 |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
| 79 |
MNA-4 |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
| 80 |
MNA-5 |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
| 81 |
MNA-6 |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
| 82 |
MNA-7 |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
| 83 |
MNA-SERIES |
Monolithic Amplifiers High Directivity, 50��, 0.5 to 5.9 GHz |
Mini-Circuits |
| 84 |
NX8560LJ303-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. FC-UPC connector. |
NEC |
| 85 |
NX8560LJ303-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. SC-UPC connector. |
NEC |
| 86 |
NX8560SJ299-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1529.953 nm. Frequency 195.95 THz. FC-UPC connector. |
NEC |
| 87 |
NX8560SJ299-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1529.953 nm. Frequency 195.95 THz. SC-UPC connector. |
NEC |
| 88 |
NX8560SJ303-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1530.334 nm. Frequency 195.90 THz. FC-UPC connector. |
NEC |
| 89 |
NX8560SJ303-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1530.334 nm. Frequency 195.90 THz. SC-UPC connector. |
NEC |
| 90 |
NX8562LB303-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. Anode ground. FC-PC connector. |
NEC |
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