No. |
Part Name |
Description |
Manufacturer |
31 |
FQPF6N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
32 |
GMG116N60FF |
1600 V single-phase rectifier bridge |
Green Power |
33 |
GMG116N60FS |
1600 V single-phase rectifier bridge |
Green Power |
34 |
GMG116N60LL |
1600 V single-phase rectifier bridge |
Green Power |
35 |
GMG116N60SF |
1600 V single-phase rectifier bridge |
Green Power |
36 |
GMG116N60SS |
1600 V single-phase rectifier bridge |
Green Power |
37 |
H06N60 |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
38 |
IRFB16N60L |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
39 |
IRFIB6N60A |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
40 |
IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
41 |
IRFP26N60L |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
42 |
IRFP26N60LPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
43 |
IXFH26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
44 |
IXFK26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
45 |
IXFK36N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
46 |
IXFN36N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
47 |
IXFR26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
48 |
IXFT26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
49 |
IXFX26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
50 |
IXGA16N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
51 |
IXGC16N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
52 |
IXGP16N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
53 |
KF6N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
54 |
KF6N60F |
N CHANNEL MOS FIELD |
Korea Electronics (KEC) |
55 |
KF6N60I |
N CHANNEL MOS FIELD |
Korea Electronics (KEC) |
56 |
MDD86N600 |
Diode Power Blocks |
IPRS Baneasa |
57 |
MTB6N60 |
TMOS POWER FET 6.0 AMPERES 600 VOLTS |
Motorola |
58 |
MTB6N60E |
TMOS POWER FET 6.0 AMPERES 600 VOLTS |
Motorola |
59 |
MTB6N60E1 |
TMOS POWER FET 6.0 AMPERES 600 VOLTS |
Motorola |
60 |
MTB6N60E1 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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