| No. |
Part Name |
Description |
Manufacturer |
| 91 |
SGS6N60UFTU |
Discrete, High Performance IGBT |
Fairchild Semiconductor |
| 92 |
SGU6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 93 |
SGW6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 94 |
SGW6N60UFD |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 95 |
SGW6N60UFDTM |
Discrete, High Performance IGBT with Diode |
Fairchild Semiconductor |
| 96 |
SKA06N60 |
IGBTs & DuoPacks - 6A 600V TO220-3-31 (Fullpack) IGBT+Diode |
Infineon |
| 97 |
SKB06N60 |
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT+Diode |
Infineon |
| 98 |
SKB06N60HS |
IGBTs & DuoPacks - 6A 600V TO263 IGBT+Diode |
Infineon |
| 99 |
SKP06N60 |
IGBTs & DuoPacks - 6A 600V TO220AB IGBT+Diode |
Infineon |
| 100 |
SKP06N60 |
Fast S-IGBT in NPT-Technology with An... |
Infineon |
| 101 |
SPA06N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 102 |
SPD06N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 103 |
SPP06N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 104 |
SSH6N60 |
N-Channel Power MOSFET |
Samsung Electronic |
| 105 |
SSM6N60 |
N-Channel Power MOSFET |
Samsung Electronic |
| 106 |
SSP6N60 |
N-Channel Power MOSFET |
Samsung Electronic |
| 107 |
STB6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 108 |
STD6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
| 109 |
STF6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 110 |
STP6N60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 111 |
STP6N60FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 112 |
STP6N60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 113 |
STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 114 |
STU6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
| 115 |
TK16N60W |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| 116 |
TK16N60W5 |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| 117 |
TSM6N60CH |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
| 118 |
TSM6N60CP |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
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