| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N5236AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 7.5 V. Tolerance +-10%. |
Microsemi |
| 32 |
1N5236BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 7.5 V. Tolerance +-5%. |
Microsemi |
| 33 |
1N5236C |
7.5 V, 20 mA, zener diode |
Leshan Radio Company |
| 34 |
1N5236D |
7.5 V, 20 mA, zener diode |
Leshan Radio Company |
| 35 |
1N5236UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 7.5 V. |
Microsemi |
| 36 |
1N5343B |
7.5 V, 175 mA, 5 W glass passivated zener diode |
Fagor |
| 37 |
1N5527A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 38 |
1N5527B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 39 |
1N5925 |
1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 40 |
1N5925A |
1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 41 |
1N5925C |
1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 42 |
1N5925D |
1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 43 |
1N6268 |
7.5 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 44 |
1N6268A |
7.5 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 45 |
1N6268C |
7.5 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 46 |
1N6268CA |
7.5 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 47 |
1N755 |
7.5 V, 400 mW silicon linear diode |
BKC International Electronics |
| 48 |
1N755 |
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). |
Fairchild Semiconductor |
| 49 |
1N755 |
400mW, 7.5 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 50 |
1N755A |
7.5 V, 400 mW silicon linear diode |
BKC International Electronics |
| 51 |
1N755A |
500mW, silicon zener diode. Zener voltage 7.5 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 52 |
1N755A-1 |
7.5 V, 400 mW silicon zener diode |
BKC International Electronics |
| 53 |
1N755B |
7.5 V, 20 mA, zener diode |
Leshan Radio Company |
| 54 |
1N755C |
500mW, silicon zener diode. Zener voltage 7.5 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 55 |
1N755C |
7.5 V, 20 mA, zener diode |
Leshan Radio Company |
| 56 |
1N755D |
500mW, silicon zener diode. Zener voltage 7.5 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 57 |
1N755D |
7.5 V, 20 mA, zener diode |
Leshan Radio Company |
| 58 |
1N78 |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 59 |
1N78A |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 60 |
1N78B |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
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