| No. |
Part Name |
Description |
Manufacturer |
| 151 |
GMKPG 1200/6.8/37.5 |
MKP-DC Filter Capacitors, Rectangular Case 37.5 mm, GMKPg1200/6.8/37.5 |
Vishay |
| 152 |
GMKPG 450/18/37.5 |
MKP-DC Filter Capacitors, Rectangular Case 37.5 mm, GMKPg450/18/37.5 |
Vishay |
| 153 |
HDSP-S80E |
HDSP-S80E · 17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays |
Agilent (Hewlett-Packard) |
| 154 |
HDSP-S80G |
HDSP-S80G · 17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays |
Agilent (Hewlett-Packard) |
| 155 |
HDSP-S85E |
HDSP-S85E · 17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays |
Agilent (Hewlett-Packard) |
| 156 |
HDSP-S85G |
HDSP-S85G · 17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays |
Agilent (Hewlett-Packard) |
| 157 |
HMC442 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz |
Hittite Microwave Corporation |
| 158 |
HMC442LM1 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 24 GHz |
Hittite Microwave Corporation |
| 159 |
HWF1687RA |
7.5 W L-band GaAs power FET |
HEXAWAVE |
| 160 |
ISPLSI5256VE-125LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 161 |
ISPLSI5256VE-125LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 162 |
ISPLSI5256VE-125LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 163 |
ISPLSI5256VE-125LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 164 |
ISPLSI5256VE-125LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 165 |
ISPLSI5256VE-125LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 166 |
ISPLSI5256VE-125LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 167 |
ISPLSI5256VE-125LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 168 |
ISPLSI5512VE-125LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 169 |
ISPLSI5512VE-125LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 170 |
ISPLSI5512VE-125LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 171 |
ISPLSI5512VE-125LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 172 |
ISPLSI5512VE-125LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 173 |
ISPLSI5512VE-125LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 174 |
ISPLSI5512VE-125LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 175 |
ISPLSI5512VE-125LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 176 |
KM416L8031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
| 177 |
KM416L8031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
| 178 |
KM44L32031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
| 179 |
KM44L32031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
| 180 |
KM44L32031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
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