| No. |
Part Name |
Description |
Manufacturer |
| 241 |
MHL9318 |
MHL9318 860-900 MHz, 3 W, 17.5 dB RF Linear LDMOS Amplifier |
Motorola |
| 242 |
MJ802 |
hfe min 25 Transistor polarity NPN Current Ic continuous max 30 A Voltage Vceo 90 V Current Ic (hfe) 7.5 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 243 |
MKC 1862 |
C-values 0.01 µF - 10 µF, Voltage 63 - 400 VDC, Flat and linear TC, PCM 10-27.5 |
Vishay |
| 244 |
MKP 1840 |
C-values 4700 pF - 10 µF, Voltage 100 - 630 VDC, Low losses, Low dielectric absorption, PCM 5-37.5 |
Vishay |
| 245 |
MKP 1841 |
C-values 470 pF - 6.8 µF, Voltage 160 - 2000 VDC, Low losses, High current and pulse load, PCM 7.5-37.5 |
Vishay |
| 246 |
MKP 1841 -M |
C-values 470 pF - 4.7 µF, Voltage 250 - 2000 VDC, Low losses, High current and pulse load, Mini version, PCM 7.5-37.5 |
Vishay |
| 247 |
MKP 1846 |
C-values 1000 pF - 0.68 µF, Voltage 630 - 2000 VDC, Low losses, High current and pulse load, PCM 15-37.5 |
Vishay |
| 248 |
MKS3 |
Metallized polyester capacitors in PCM 7.5 mm |
etc |
| 249 |
MKT 1820 |
C-values 1000 pF - 15 µF, Voltage 63 - 1000 VDC, Max. temp. 125°C, PCM 10-27.5 |
Vishay |
| 250 |
MKT 1822 |
C-values 1000 pF - 15 µF, Voltage 63 - 1000 VDC, PCM 10-27.5 |
Vishay |
| 251 |
MMBZ5236B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA. |
Chenyi Electronics |
| 252 |
MMSF7N03Z |
SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS |
Motorola |
| 253 |
MRF1511T1 |
175 MHz, 8 W, 7.5 V Lateral N–Channel Broadband RF Power MOSFET |
Freescale (Motorola) |
| 254 |
MRF1517T1 |
520 MHz, 8 W, 7.5 V Lateral N–Channel Broadband RF Power MOSFET |
Freescale (Motorola) |
| 255 |
MZP4737A |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 7.5 V. +-5% tolerance. |
Motorola |
| 256 |
MZP4737C |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 7.5 V. +-2% tolerance. |
Motorola |
| 257 |
MZP4737D |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 7.5 V. +-1% tolerance. |
Motorola |
| 258 |
MZT2971 |
10 watt zener transient suppressor. Nom zener voltage 7.5 V. |
Motorola |
| 259 |
MZT3306 |
50 watt zener transient suppressor. Nom zener voltage 7.5 V. |
Motorola |
| 260 |
NBXSBB022 |
Crystal Oscillator Module, 3.3 V, 187.5 MHz PureEdge™ LVPECL |
ON Semiconductor |
| 261 |
NBXSPA022 |
2.5 V / 3.3 V, 187.5 MHz PureEdge™ Single Frequency LVDS Clock Oscillator Module |
ON Semiconductor |
| 262 |
NE5511279A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 263 |
NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 264 |
NE5511279A-T1A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 265 |
NTMD4840N |
Power MOSFET, 30 V, 7.5 A, Dual N-Channel |
ON Semiconductor |
| 266 |
NTMS4840N |
Power MOSFET 30 V, 7.5 A, Single N−Channel, SOIC−8 |
ON Semiconductor |
| 267 |
NTMS5838NL |
Power MOSFET, 40 V, 7.5 A, 20 mΩ |
ON Semiconductor |
| 268 |
NTQD4154Z |
Power MOSFET 20 V, 7.5 A, Common-Drain, Dual N-Channel TSSOP-8 |
ON Semiconductor |
| 269 |
PBSS4021SN |
20 V, 7.5 A NPN/NPN low V_CEsat (BISS) transistor |
Nexperia |
| 270 |
PBSS4021SN |
20 V, 7.5 A NPN/NPN low V_CEsat (BISS) transistor |
NXP Semiconductors |
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