| No. |
Part Name |
Description |
Manufacturer |
| 361 |
TIC126C |
300 V, 7.5 A, PNP silicon reverse-blocking triode thyristor |
Texas Instruments |
| 362 |
TIC126D |
400 V, 7.5 A, PNP silicon reverse-blocking triode thyristor |
Texas Instruments |
| 363 |
TIC126E |
500 V, 7.5 A, PNP silicon reverse-blocking triode thyristor |
Texas Instruments |
| 364 |
TIC126F |
50 V, 7.5 A, PNP silicon reverse-blocking triode thyristor |
Texas Instruments |
| 365 |
TIC126M |
600 V, 7.5 A, PNP silicon reverse-blocking triode thyristor |
Texas Instruments |
| 366 |
TP212 |
7.5 Volts Transistor 1.5W 88MHz 13dB Gain |
TRW |
| 367 |
TP212S |
7.5 Volts Transistor 1.5W 88MHz 13dB Gain |
TRW |
| 368 |
TP251 |
7.5 Volts Transistor 0.2W 400-512MHz 13dB Gain |
TRW |
| 369 |
TP252 |
7.5 Volts Transistor 1.5W 400-512MHz 10dB Gain |
TRW |
| 370 |
TQQ0302 |
1747.5 MHz RF BAW Filter - Band 3 Uplink |
Qorvo |
| 371 |
TQQ6103 |
1747.5 / 1842.5 MHz BAW Duplexer - Band 3 |
Qorvo |
| 372 |
TQQ7303 |
1747.5 MHz RF BAW Filter - Band 3 Uplink |
Qorvo |
| 373 |
UPC1678 |
5 V-BIAS, +7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER |
NEC |
| 374 |
UPC1678G |
5 V-BIAS, +7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER |
NEC |
| 375 |
UPC1678GV |
5 V-BIAS, +7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER |
NEC |
| 376 |
VN2222LL |
60 V, 7.5 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 377 |
VN2222LM |
60 V, 7.5 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 378 |
VTV-075 |
7.5 W, 25 V, 175-225 MHz, silicon NPN transistor |
Acrian |
| 379 |
VTV-075-2 |
7.5 W, 25 V, 175-225 MHz, silicon NPN transistor |
Acrian |
| 380 |
VTV-075-3 |
7.5 W, 25 V, 175-225 MHz, silicon NPN transistor |
Acrian |
| 381 |
VTV-075-4 |
7.5 W, 25 V, 175-225 MHz, silicon NPN transistor |
Acrian |
| 382 |
VTV075 |
7.5 Watts, 25 Volts, Class A VHF Television - Band III |
GHz Technology |
| 383 |
XCR3512XL-7FT324C |
512 macrocell CPLD. 7.5 ns pin-to-pin delay. Vcc = 3.0V to 3.6V. |
Xilinx |
| 384 |
ZM4737 |
7.5 V, silicon planar power zener diode |
BKC International Electronics |
| 385 |
ZM4737A |
7.5 V, silicon planar power zener diode |
BKC International Electronics |
| 386 |
ZMM5236A |
Surface mount zener diode. Nominal zener voltage 7.5 V. Test current 20 mA. +-3% tolerance. |
Jinan Gude Electronic Device |
| 387 |
ZMM5236C |
Surface mount zener diode. Nominal zener voltage 7.5 V. Test current 20 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 388 |
ZMM5236D |
Surface mount zener diode. Nominal zener voltage 7.5 V. Test current 20 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
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