No. |
Part Name |
Description |
Manufacturer |
31 |
2N6487 |
POWER TRANSISTORS(15A,75W) |
MOSPEC Semiconductor |
32 |
2N6487 |
15A complementary silicon plastic 75W power NPN transistor |
Motorola |
33 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
34 |
2N6488 |
POWER TRANSISTORS(15A,75W) |
MOSPEC Semiconductor |
35 |
2N6488 |
15A complementary silicon plastic 75W power NPN transistor |
Motorola |
36 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
37 |
2N6489 |
POWER TRANSISTORS(15A,75W) |
MOSPEC Semiconductor |
38 |
2N6489 |
15A complementary silicon plastic 75W power PNP transistor |
Motorola |
39 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
40 |
2N6490 |
POWER TRANSISTORS(15A,75W) |
MOSPEC Semiconductor |
41 |
2N6490 |
15A complementary silicon plastic 75W power PNP transistor |
Motorola |
42 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
43 |
2N6491 |
POWER TRANSISTORS(15A,75W) |
MOSPEC Semiconductor |
44 |
2N6491 |
15A complementary silicon plastic 75W power PNP transistor |
Motorola |
45 |
2N6546 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
46 |
2N6546 |
15A NPN Silicon 175W power transistor SWITCHMODE series |
Motorola |
47 |
2N6547 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
48 |
2N6547 |
15A NPN Silicon 175W power transistor SWITCHMODE series |
Motorola |
49 |
2N6676 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
50 |
2N6677 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
51 |
2N6678 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
52 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
53 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
54 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
55 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
56 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
57 |
40347 |
Silicon N-P-N transistor. 60V, 8.75W. |
General Electric Solid State |
58 |
40348 |
Silicon N-P-N transistor. 90V, 8.75W. |
General Electric Solid State |
59 |
40675 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
60 |
5962R8955201VFA(54AC175WRQMLV) |
Quad D Flip-Flop |
National Semiconductor |
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