| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N6490 |
15A 75W Silicon PNP Epitaxial-Base VERSAWATT Transistor |
RCA Solid State |
| 62 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
| 63 |
2N6491 |
POWER TRANSISTORS(15A,75W) |
MOSPEC Semiconductor |
| 64 |
2N6491 |
15A complementary silicon plastic 75W power PNP transistor |
Motorola |
| 65 |
2N6491 |
15A 75W Silicon PNP Epitaxial-Base VERSAWATT Transistor |
RCA Solid State |
| 66 |
2N6546 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
| 67 |
2N6546 |
15A NPN Silicon 175W power transistor SWITCHMODE series |
Motorola |
| 68 |
2N6547 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
| 69 |
2N6547 |
15A NPN Silicon 175W power transistor SWITCHMODE series |
Motorola |
| 70 |
2N6676 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
| 71 |
2N6677 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
| 72 |
2N6678 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
| 73 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
| 74 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 75 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 76 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 77 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 78 |
40347 |
Silicon N-P-N transistor. 60V, 8.75W. |
General Electric Solid State |
| 79 |
40348 |
Silicon N-P-N transistor. 90V, 8.75W. |
General Electric Solid State |
| 80 |
40675 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
| 81 |
5962R8955201VFA(54AC175WRQMLV) |
Quad D Flip-Flop |
National Semiconductor |
| 82 |
5962R8955201VFA(54AC175WRQMLV) |
Quad D Flip-Flop |
National Semiconductor |
| 83 |
5962R8955201VFA(54AC175WRQMLV) |
Quad D Flip-Flop |
National Semiconductor |
| 84 |
5962R8969301VFA(54ACT175WRQMLV) |
Quad D Flip-Flop |
National Semiconductor |
| 85 |
5962R8969301VFA(54ACT175WRQMLV) |
Quad D Flip-Flop |
National Semiconductor |
| 86 |
80-2 |
VHF 175MHz 7.5V 0.75W NPN RF Transistor |
SGS Thomson Microelectronics |
| 87 |
BCP75W |
5V and 3.3V, "Half-Brick" 75 Watt, DC/DC Converters |
Datel |
| 88 |
BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE. |
Continental Device India Limited |
| 89 |
BF775W |
NPN Silicon RF transistor especially ... |
Infineon |
| 90 |
BF775W |
NPN Silicon RF Transistor (Especially suitable for TV-sat and UHF tuners) |
Siemens |
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