| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1514-80A |
Delay 80 +/-4 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 32 |
1514-80B |
Delay 80 +/-4 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 33 |
1514-80G |
Delay 80 +/-4 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 34 |
1515-80A |
Delay 80 +/-4 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 35 |
15KP180 |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
| 36 |
15KP180A |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |
Panjit International Inc |
| 37 |
15KP180C |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
| 38 |
15KP180CA |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |
Panjit International Inc |
| 39 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 40 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 41 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 42 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 43 |
1K2S-N003 |
Input voltage 200-260 VAC;output voltage 3.3 VDC;output current:180 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 44 |
1K2S-N005 |
Input voltage 200-260 VAC;output voltage 5 VDC;output current:180 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 45 |
1K2S-N015 |
Input voltage 200-260 VAC;output voltage 15 VDC;output current:80 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 46 |
1M180Z |
180 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 47 |
1M180ZS1 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 1% tolerance. |
Motorola |
| 48 |
1M180ZS2 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 2% tolerance. |
Motorola |
| 49 |
1M180ZS5 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 5% tolerance. |
Motorola |
| 50 |
1N198 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 51 |
1N297 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 52 |
1N297A |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 53 |
1N3666M1 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 54 |
1N3666M2 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 55 |
1N419 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 56 |
1N4680 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 57 |
1N500 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 58 |
1N5195 |
180 V, 500 mW silicon diode |
BKC International Electronics |
| 59 |
1N5279AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 180 V. Tolerance +-10%. |
Microsemi |
| 60 |
1N5279BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 180 V. Tolerance +-5%. |
Microsemi |
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