| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5195 |
180 V, 500 mW silicon diode |
BKC International Electronics |
| 62 |
1N5279AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 180 V. Tolerance +-10%. |
Microsemi |
| 63 |
1N5279BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 180 V. Tolerance +-5%. |
Microsemi |
| 64 |
1N5279UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 180 V. |
Microsemi |
| 65 |
1N5386B |
180 V, 5 mA, 5 W glass passivated zener diode |
Fagor |
| 66 |
1N5386B |
180 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 67 |
1N5395G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
Jinan Gude Electronic Device |
| 68 |
1N5955 |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 69 |
1N5955A |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 70 |
1N5955B |
180 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 71 |
1N5955C |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 72 |
1N5955D |
1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 73 |
1N6302 |
180 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 74 |
1N6302A |
180 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 75 |
1N6302C |
180 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 76 |
1N6302CA |
180 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 77 |
1N771 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 78 |
1N771A |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 79 |
1N771B |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 80 |
1N772 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 81 |
1N991A |
180 V, zener diode |
Leshan Radio Company |
| 82 |
1SMA180Z |
180 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 83 |
1SMB2EZ180 |
180 V, 2 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 84 |
1SMB3EZ180 |
180 V, 3 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 85 |
1SMB5955 |
180 V, 1.5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 86 |
1SMB5955A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 180 V. +-10% tolerance. |
Motorola |
| 87 |
1SMB5955B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 180 V. +-5% tolerance. |
Motorola |
| 88 |
1SMC5386 |
180 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 89 |
1Z180 |
Silicon diffused type zener diode. Typ zener voltage 180 V. |
Panasonic |
| 90 |
2075-4000 |
Delay 4000 +/-80 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
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