| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BUK7Y59-60E |
N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56 |
NXP Semiconductors |
| 32 |
BUK9E4R9-60E |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 33 |
BUK9M19-60E |
N-channel 60 V, 19 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
| 34 |
BUK9Y59-60E |
N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56 |
Nexperia |
| 35 |
BUK9Y59-60E |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 36 |
BY229-600 |
Rectifier Diodes fast, soft-recovery |
Philips |
| 37 |
BY229-600 |
Diodes |
Vishay |
| 38 |
BY249-600 |
Rectifier diodes general purpose |
Philips |
| 39 |
BYR29-600 |
Ultrafast power diode |
NXP Semiconductors |
| 40 |
BYR29-600 |
Rectifier diodes ultrafast |
Philips |
| 41 |
BYT79-600 |
Ultrafast power diode |
NXP Semiconductors |
| 42 |
BYV29-600 |
Ultrafast power diode |
NXP Semiconductors |
| 43 |
BYV29-600 |
Rectifier diodes ultrafast |
Philips |
| 44 |
BYX39-600 |
Controlled avalanche diode |
mble |
| 45 |
BYX39-600 |
Silicon avalanche rectifier diode |
Mullard |
| 46 |
BYX39-600 |
Controlled Avalanche Rectifier Diode, normal polarity 600V |
Philips |
| 47 |
BYX39-600R |
Controlled avalanche diode |
mble |
| 48 |
BYX39-600R |
Silicon avalanche rectifier diode, reverse polarity (stud-anode) |
Mullard |
| 49 |
BYX39-600R |
Controlled Avalanche Rectifier Diode, reverse polarity 600V |
Philips |
| 50 |
BYX49-600 |
Rectifier diode |
mble |
| 51 |
BYX49-600 |
Rectifier diodes |
Mullard |
| 52 |
BYX49-600R |
Rectifier diode |
mble |
| 53 |
CY7C1329-60AC |
64K x 32 Synchronous-Pipelined Cache RAM |
Cypress |
| 54 |
HM69-60R10 |
High Current Low Profile Surface Mount Inductors |
BI Technologies |
| 55 |
HM69-60R15 |
High Current Low Profile Surface Mount Inductors |
BI Technologies |
| 56 |
HM69-60R20 |
High Current Low Profile Surface Mount Inductors |
BI Technologies |
| 57 |
LH5P8129-60 |
CMOS 1M(128K x 8)CS-control pseudo-static RAM |
SHARP |
| 58 |
MB81N643289-60 |
8 x 256K x 32 BIT DOUBLE DATA RATE FCRAM |
Fujitsu Microelectronics |
| 59 |
MB81N643289-60 |
MEMORY 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAM |
Fujitsu Microelectronics |
| 60 |
MB81N643289-60FN |
8 x 256K x 32 bit double data rate FCRAM |
Fujitsu Microelectronics |
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