| No. |
Part Name |
Description |
Manufacturer |
| 61 |
MCR159-60 |
Integrated GATE THYRISTORS PNPN 110 Amperes RMS, 600V |
Motorola |
| 62 |
MCR39-60 |
Thyristor 7A RMS, 600V |
Motorola |
| 63 |
PSMN3R9-60PS |
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 |
Nexperia |
| 64 |
PSMN3R9-60PS |
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 |
NXP Semiconductors |
| 65 |
PSMN3R9-60XS |
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) |
Nexperia |
| 66 |
PSMN3R9-60XS |
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) |
NXP Semiconductors |
| 67 |
PSR242.5-2 |
60 Watt, input voltage range:29-60V, output voltage 24V (2.5A), switching regulator |
Power-One |
| 68 |
TGF149-600A |
V(drm): 600V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 69 |
TM4100EAD9-60 |
4 194 304 By 9-Bit Dynamic RAM Module |
Texas Instruments |
| 70 |
TM497EU9-60 |
4 194 304-Word By 9-Bit Dynamic RAM Module |
Texas Instruments |
| 71 |
TMS418169-60DZ |
1 048 576-Word By 16-Bit Extended Data Out High-Speed DRAMS |
Texas Instruments |
| 72 |
TMS44409-60DJ |
1 048 576-Word By 4-Bit DRAM |
Texas Instruments |
| 73 |
TPM1919-60 |
MICROWAVE POWER GAAS FET |
TOSHIBA |
| | | |
