| No. |
Part Name |
Description |
Manufacturer |
| 31 |
GM71CS17800CLJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
| 32 |
GM71CS17800CLJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
| 33 |
GM71CS18163CLJ-5 |
1,048,576 words x 16 bit CMOS DRAM, 50ns, low power |
Hynix Semiconductor |
| 34 |
GM71CS18163CLJ-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
| 35 |
GM71CS18163CLJ-7 |
1,048,576 words x 16 bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
| 36 |
GM71V17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
| 37 |
GM71V17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
| 38 |
GM71V17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
| 39 |
GM71V18163CLJ-5 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns |
Hynix Semiconductor |
| 40 |
GM71V18163CLJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
| 41 |
GM71V18163CLJ-7 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns |
Hynix Semiconductor |
| 42 |
GM71VS17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
| 43 |
GM71VS17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
| 44 |
GM71VS17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
| 45 |
GM71VS18163CLJ-5 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns |
Hynix Semiconductor |
| 46 |
GM71VS18163CLJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
| 47 |
GM71VS18163CLJ-7 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns |
Hynix Semiconductor |
| 48 |
HM514260CLJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 49 |
HM514260CLJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 50 |
HM514260CLJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 51 |
HM514260CLJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 52 |
HM514800CLJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 53 |
HM514800CLJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 54 |
HM514800CLJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 55 |
HM514800CLJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 56 |
HM514800CLJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 57 |
HM51S4260CLJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 58 |
HM51S4260CLJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 59 |
HM51S4260CLJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 60 |
HM51S4260CLJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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