No. |
Part Name |
Description |
Manufacturer |
61 |
HM51S4800CLJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
62 |
HM51S4800CLJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
63 |
HM51S4800CLJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
64 |
HM51S4800CLJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
65 |
HM51S4800CLJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
66 |
HM621400HCJP/HCLJP |
High-Speed SRAMs |
Hitachi Semiconductor |
67 |
HM621400HCLJP-10 |
4M High Speed SRAM (4-Mword x 1-bit) |
Hitachi Semiconductor |
68 |
HM621400HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
69 |
HM6216255HCJP/HCLJP |
High-Speed SRAMs |
Hitachi Semiconductor |
70 |
HM6216255HCLJP-10 |
4M High Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
71 |
HM6216255HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
72 |
HM624100HCJP/HCLJP |
High-Speed SRAMs |
Hitachi Semiconductor |
73 |
HM624100HCLJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
74 |
HM624100HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
75 |
HM628511HCJP/HCLJP |
High-Speed SRAMs |
Hitachi Semiconductor |
76 |
HM628511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
77 |
HM628511HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
78 |
HM62W16255HCJP/HCLJP |
High-Speed SRAMs |
Hitachi Semiconductor |
79 |
HM62W16255HCLJP-10 |
4M High Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
80 |
HM62W16255HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
81 |
HM62W4100HCJP/HCLJP |
High-Speed SRAMs |
Hitachi Semiconductor |
82 |
HM62W4100HCLJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
83 |
HM62W4100HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
84 |
HM62W8511HCJP/HCLJP |
High-Speed SRAMs |
Hitachi Semiconductor |
85 |
HM62W8511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
86 |
HM62W8511HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
87 |
KM681002CLJ-10 |
128K x 8 high speed static RAM, 5V operating, 10ns, low power |
Samsung Electronic |
88 |
KM681002CLJ-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
89 |
KM681002CLJ-15 |
128K x 8 high speed static RAM, 5V operating, 15ns, low power |
Samsung Electronic |
90 |
KM681002CLJ-20 |
128K x 8 high speed static RAM, 5V operating, 20ns, low power |
Samsung Electronic |
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