No. |
Part Name |
Description |
Manufacturer |
31 |
ERJL1DUF83MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
32 |
ERJL1WUF83MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
33 |
IRF830 |
POWER MOSFET |
BayLinear |
34 |
IRF830 |
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
35 |
IRF830 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
36 |
IRF830 |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
37 |
IRF830 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
38 |
IRF830 |
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
39 |
IRF830 |
Power Field Effect Transistor |
ON Semiconductor |
40 |
IRF830 |
PowerMOS transistor Avalanche energy rated |
Philips |
41 |
IRF830 |
N-Channel Power MOSFET |
Samsung Electronic |
42 |
IRF830 |
N - CHANNEL 500V - 1.35W - 4.5A - TO-220 PowerMESH MOSFET |
SGS Thomson Microelectronics |
43 |
IRF830 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
44 |
IRF830 |
N-CHANNEL 500V - 1.35 OHM - 4.5A - TO-220 POWERMESH MOSFET |
ST Microelectronics |
45 |
IRF830 |
500 V,power field effect transistor |
TRANSYS Electronics Limited |
46 |
IRF830 |
N-CHANNEL ENHANCEMENT MODE |
TRSYS |
47 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
48 |
IRF8301M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
49 |
IRF8301MTRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
50 |
IRF8302M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. |
International Rectifier |
51 |
IRF8302MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. |
International Rectifier |
52 |
IRF8304M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. |
International Rectifier |
53 |
IRF8304MTR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. |
International Rectifier |
54 |
IRF8306M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
55 |
IRF8306MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
56 |
IRF8308M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. |
International Rectifier |
57 |
IRF8308MTR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. |
International Rectifier |
58 |
IRF830A |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
59 |
IRF830AL |
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
60 |
IRF830APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
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